Hyperfast Diode 30 A, 400 V 600 V RHRG3040, RHRG3060 Description The RHRG3040, RHRG3060 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. www.onsemi.com These devices are intended to be used as freewheeling/clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. CATHODE CATHODE (BOTTOM Features SIDE METAL) ANODE Hyperfast Recovery t = 45 ns ( I = 30 A) rr F TO2472LD Max Forward Voltage, V = 2.1 V ( T = 25C) F C CASE 340CL 400 V, 600 V Reverse Voltage and High Reliability Avalanche Energy Rated These Devices are PbFree and are RoHS Compliant SYMBOL K Applications Switching Power Supplies Power Switching Circuits General Purpose A MARKING DIAGRAM Y&Z&3&K RHRG30XX Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code RHRG30XX = Specific Device Code XX = 40, 60 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: March, 2020 Rev. 3 RHRG3060/DRHRG3040, RHRG3060 ABSOLUTE MAXIMUM RATINGS (T = 25C, unless otherwise specified) C Parameter Symbol RHRG3040 RHRG3060 Unit Peak Repetitive Reverse Voltage V 400 600 V RRM Working Peak Reverse Voltage V 400 600 V RWM DC Blocking Voltage V 400 600 V R Average Rectified Forward Current (T = 120C) I 30 30 A C F(AV) Repetitive Peak Surge Current (Square Wave, 20 kHz) I 70 70 A FRM Nonrepetitive Peak Surge Current (Halfwave, 1 Phase, 60 Hz) I 325 325 A FSM Maximum Power Dissipation P 125 125 W D Avalanche Energy (See Figures 10 and 11) E 20 20 mJ AVL Operating and Storage Temperature T , T 65 to 175 65 to 175 C STG J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Shipping RHRG3040 RHRG3040 TO2472LD 450 / Tube RHRG3060 RHRG3060 TO2472LD 450 / Tube ELECTRICAL SPECIFICATION (T = 25C, unless otherwise specified) C RHRG3040 RHRG3060 Min Typ Max Min Typ Max Characteristics Symbol Test Condition Unit Instantaneous Forward Voltage V I = 30 A 2.1 2.1 V F F (Pulse Width = 300 s, I = 30 A, T = 150C 1.7 1.7 V Duty Cycle = 2%) F C Instantaneous Reverse Current I V = 400 V 250 A R R V = 600 V 250 A R V = 400 V, T = 150C 1.0 mA R C V = 600 V, T = 150C 1.0 mA R C Reverse Recovery Time t I = 1 A, dI /dt = 200 A/ s 40 40 ns rr F F (See Figure 9) I = 30 A, dI /dt = 200 A/ s 45 45 ns Summation of t + t F F a b Time to Reach Peak Reverse t I = 30 A, dI /dt = 200 A/ s 22 22 ns a F F Current (See Figure 9) Time from Peak I to Projected t I = 30 A, dI /dt = 200 A/ s 18 18 ns RM b F F Zero Crossing of I Based RM on a Straight Line from Peak I RM through 25% of I RM (See Figure 9) Reverse Recovery Charge Q I = 30 A, dI /dt = 200 A/ s 100 100 nC rr F F Junction Capacitance C V = 10 V, I = 0 A 85 85 pF J R F Thermal Resistance Junction 1.2 1.2 C/W R JC to Case Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2