X-On Electronics has gained recognition as a prominent supplier of NVD6495NLT4G mosfet across the USA, India, Europe, Australia, and various other global locations. NVD6495NLT4G mosfet are a product manufactured by ON Semiconductor. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

NVD6495NLT4G ON Semiconductor

NVD6495NLT4G electronic component of ON Semiconductor
Images are for reference only
See Product Specifications
Part No.NVD6495NLT4G
Manufacturer: ON Semiconductor
Category:MOSFET
Description: ON Semiconductor MOSFET NFET DPAK 100V 23A 56MOHM
Datasheet: NVD6495NLT4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1


Multiples : 764
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 2.4389
10 : USD 0.8392
100 : USD 0.6358
500 : USD 0.5546
1000 : USD 0.4648
2500 : USD 0.4434
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Brand
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the NVD6495NLT4G from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVD6495NLT4G and other electronic components in the MOSFET category and beyond.

MOSFET Power, N-Channel, Logic Level 100 V, 25 A, 50 m NVD6495NL Features Low R DS(on) NVD6495NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 100 V (BR)DSS GS D V = 0 V, I = 250 A, T = 40C 92 GS D J DraintoSource Breakdown Voltage V /T 115 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 100 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V 1.0 2.0 V V = V , I = 250 A GS(TH) GS DS D Negative Threshold Temperature V /T 4.8 mV/C GS(TH) J Coefficient DraintoSource OnResistance R V = 4.5 V, I = 10 A 44 54 m DS(on) GS D V = 10 V, I = 10 A 43 50 GS D Forward Transconductance g V = 5.0 V, I = 10 A 24 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 1024 pF ISS Output Capacitance C V = 0 V, f = 1.0 MHz, V = 25 V 156 OSS GS DS Reverse Transfer Capacitance C 70 RSS nC Total Gate Charge Q 20 G(TOT) Threshold Gate Charge Q 1.1 G(TH) V = 4.5 V, V = 80 V, I = 23 A GS DS D GatetoSource Charge Q 3.1 GS GatetoDrain Charge Q 14 GD Total Gate Charge Q V = 10 V, V = 80 V, I = 23 A 35 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 11 ns d(on) Rise Time t 91 r V = 4.5 V, V = 80 V, GS DD I = 23 A, R = 6.1 TurnOff Delay Time t D G 40 d(off) Fall Time t 71 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.87 1.2 V SD J V = 0 V, I = 23 A GS S T = 125C 0.74 J Reverse Recovery Time t 64 ns RR Charge Time T 40 a V = 0 V, dI /dt = 100 A/ s, GS S I = 23 A S Discharge Time T 24 b Reverse Recovery Charge Q 152 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device Package Shipping NVD6495NLT4G DPAK 2500 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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