NVD5C434N MOSFET Power, Single, N-Channel 40 V, 2.1 m , 163 A Features www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G AECQ101 Qualified and PPAP Capable V R I These Devices are PbFree, Halogen Free/BFR Free and are RoHS (BR)DSS DS(on) D Compliant 40 V 2.1 m 10 V 163 A MAXIMUM RATINGS (T = 25C unless otherwise noted) J D Parameter Symbol Value Unit DraintoSource Voltage V 40 V DSS GatetoSource Voltage V 20 V GS G Continuous Drain Cur- T = 25C I 163 A D C rent R (Notes 1 & 3) JC T = 100C 115 C Steady S State Power Dissipation R T = 25C P 117 W JC C D NCHANNEL MOSFET (Note 1) T = 100C 58 C 4 Continuous Drain T = 25C I 26 A A D Current R JA T = 100C 22 (Notes 1, 2 & 3) A Steady 2 1 State Power Dissipation R T = 25C P 3.2 W 3 JA A D (Notes 1 & 2) T = 100C 2.2 A DPAK CASE 369C Pulsed Drain Current T = 25C, t = 10 s I 900 A DM A p STYLE 2 Operating Junction and Storage Temperature T , T 55 to C J stg 175 MARKING DIAGRAM Source Current (Body Diode) I 130 A S & PIN ASSIGNMENT Single Pulse DraintoSource Avalanche E 420 mJ AS Energy (T = 25C, I = 25 A) 4 J L(pk) Drain Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 THERMAL RESISTANCE MAXIMUM RATINGS Drain 1 3 Parameter Symbol Value Unit Gate Source C/W JunctiontoCase (Drain) (Note 1) R 1.28 A = Assembly Location JC Y = Year JunctiontoAmbient Steady State (Note 2) R 48 JA WW = Work Week 1. The entire application environment impacts the thermal resistance values shown, 5C434N= Device Code they are not constants and are only valid for the particular conditions noted. G = PbFree Package 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: June, 2019 Rev. 0 NVD5C434N/D AYWW 5C 434NGNVD5C434N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 18 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I A T = 25C 10 DSS J V = 0 V, GS V = 40 V DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 7.9 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V, I = 50 A 1.7 2.1 m DS(on) GS D Forward Transconductance g V = 3 V, I = 50 A 155 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCES pF Input Capacitance C 5400 iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 3000 oss V = 25 V DS Reverse Transfer Capacitance C 71 rss nC Total Gate Charge Q 80.6 G(TOT) Threshold Gate Charge Q 15.2 G(TH) V = 10 V, V = 32 V, GS DS GatetoSource Charge Q 25.2 GS I = 50 A D GatetoDrain Charge Q 15.4 GD Plateau Voltage V 4.8 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 15 ns d(on) Rise Time t 78 r V = 10 V, V = 32 V, GS DS I = 50 A, R = 2.5 TurnOff Delay Time t D G 43 d(off) Fall Time t 14 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.8 1.2 V SD J V = 0 V, GS I = 50 A S T = 125C 0.7 J Reverse Recovery Time t 73 ns RR Charge Time ta 36 V = 0 V, dIs/dt = 100 A/ s, GS I = 50 A S Discharge Time tb 37 Reverse Recovery Charge Q 120 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2