NTND3184NZ Small Signal MOSFET 23 V, 200 mA, Dual NChannel, 0.65 mm x 0.90 mm x 0.4 mm XLLGA6 Package www.onsemi.com Features Dual NChannel MOSFET V R MAX I Max (BR)DSS DS(ON) D Offers a Low R Solution in the Ultra Small 0.65 mm DS(ON) 1.5 4.5 V x 0.90 mm Package 2.0 2.5 V 23 V 200 mA These Devices are PbFree, Halogen Free/BFR Free and are RoHS 3.0 1.8 V Compliant 4.5 1.5 V Applications Small Signal Load Switch D1 D2 Analog Switch High Speed Interfacing G1 G2 Optimized for Power Management in Ultra Portable Products MAXIMUM RATINGS (T = 25C unless otherwise specified) J NChannel Parameter Symbol Value Unit MOSFET S1 S2 DraintoSource Voltage V 23 V DSS GatetoSource Voltage V 8 V GS Continuous Drain Steady T = 25C I 200 mA D A Current (Note 1) State XLLGA6 T = 85C 140 A Case 713AC t 5 s T = 25C 220 A Power Dissipation Steady T = 25C P 125 mW A D PINOUT DIAGRAM (Note 1) State t 5 s 166 S1 1 6 D1 Pulsed Drain Current t = 10 s I 800 mA p DM G1 2 Operating Junction and Storage Temperature T , 55 to C J 5 G2 T 150 STG Source Current (Body Diode) (Note 2) I 200 mA S D2 3 4 S2 Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) (Bottom View) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MARKING DIAGRAM 1. Surfacemounted on FR4 board using the minimum recommended pad size, 1 oz Cu. A M 2. Pulse Test: pulse width 300 s, duty cycle 2% 1 A = Specific Device Code M = Date Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: November, 2016 Rev. 2 NTND3184NZ/DNTND3184NZ THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit JunctiontoAmbient Steady State (Note 3) 998 R C/W JA JunctiontoAmbient t 5 s (Note 3) 751 3. Surfacemounted on FR4 board using the minimum recommended pad size, 1 oz Cu. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 23 V (BR)DSS GS D Zero Gate Voltage Drain Current T = 25C 50 nA J V = 0 V, V = 5 V GS DS T = 85C 200 I J DSS nA V = 0 V, V = 16 V T = 25C 100 GS DS J GatetoSource Leakage Current I V = 0 V, V = 5.0 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 0.4 1.0 V GS(TH) GS DS D DraintoSource On Resistance V = 4.5 V, I = 100 mA 0.8 1.5 GS D V = 2.5 V, I = 50 mA 1.1 2.0 GS D R DS(ON) V = 1.8 V, I = 20 mA 1.4 3.0 GS D V = 1.5 V, I = 10 mA 1.8 4.5 GS D Forward Transconductance g V = 5.0 V, I = 125 mA 0.48 S FS DS D Forward Diode Voltage V V = 0 V, I = 10 mA 0.6 1.0 V SD GS S CAPACITANCES Input Capacitance C 12.3 ISS f = 1 MHz, V = 0 V GS Output Capacitance C 3.4 pF OSS V = 15 V DS Reverse Transfer Capacitance C 2.5 RSS SWITCHING CHARACTERISTICS, V = 4.5 V (Note 4) GS TurnOn Delay Time t 16.5 d(ON) Rise Time t 25.5 r V = 4.5 V, V = 10 V, GS DD ns I = 200 mA, R = 3 D G TurnOff Delay Time t 142 d(OFF) Fall Time t 80 f Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device Package Shipping NTND3184NZTAG XLLGA6 8000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2