X-On Electronics has gained recognition as a prominent supplier of NTJD4401NT1G mosfet across the USA, India, Europe, Australia, and various other global locations. NTJD4401NT1G mosfet are a product manufactured by ON Semiconductor. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

NTJD4401NT1G ON Semiconductor

NTJD4401NT1G electronic component of ON Semiconductor
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See Product Specifications
Part No.NTJD4401NT1G
Manufacturer: ON Semiconductor
Category:MOSFET
Description: MOSFET 20V Dual N-Channel ESD Protection
Datasheet: NTJD4401NT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5261 ea
Line Total: USD 0.53

Availability - 2740
Ships to you between
Mon. 10 Jun to Fri. 14 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2740 - WHS 1


Ships to you between Mon. 10 Jun to Fri. 14 Jun

MOQ : 1
Multiples : 1
1 : USD 0.5261
10 : USD 0.2528
25 : USD 0.2502
100 : USD 0.1565
250 : USD 0.155
500 : USD 0.1338
1000 : USD 0.0923

2328 - WHS 2


Ships to you between Mon. 10 Jun to Fri. 14 Jun

MOQ : 5
Multiples : 1
5 : USD 0.364
25 : USD 0.195
100 : USD 0.1586
117 : USD 0.1417
322 : USD 0.1339

2740 - WHS 3


Ships to you between Mon. 10 Jun to Fri. 14 Jun

MOQ : 85
Multiples : 1
85 : USD 0.2502
100 : USD 0.1565
250 : USD 0.155
500 : USD 0.1338
1000 : USD 0.0923

17460 - WHS 4


Ships to you between Mon. 10 Jun to Fri. 14 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.1188
9000 : USD 0.104
24000 : USD 0.1037
45000 : USD 0.0932

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Product
Series
Transistor Type
Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the NTJD4401NT1G from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTJD4401NT1G and other electronic components in the MOSFET category and beyond.

The NTJD4401NT1G is a dual N-channel MOSFET transistor manufactured by ON Semiconductor. It is designed for enhanced power switching applications, allowing for load currents of up to 4A at 25°C with very low power losses. This transistor features low Gate-to-Source leakage current, low input capacitance and high breakdown voltage. It has logic-level and vertical DPAK (Discrete Power Array) packaging for easy mounting on a circuit board. Its market applications include AC/DC adapters, DC/DC converters, motor controllers, LCD backlights, printer supplies and solar panel inverters.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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