X-On Electronics has gained recognition as a prominent supplier of NGTB35N60FL2WG igbt transistors across the USA, India, Europe, Australia, and various other global locations. NGTB35N60FL2WG igbt transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for igbt transistors, ensuring timely deliveries around the world.

NGTB35N60FL2WG

NGTB35N60FL2WG electronic component of ON Semiconductor
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See Product Specifications
Part No.NGTB35N60FL2WG
Manufacturer: ON Semiconductor
Category:IGBT Transistors
Description: ON Semiconductor IGBT Transistors 600V35A FAST IGBT FSII T
Datasheet: NGTB35N60FL2WG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 270
Multiples : 1
270 : USD 2.0195
2700 : USD 1.9367
27000 : USD 1.8979
N/A

Obsolete
0 - WHS 2

MOQ : 270
Multiples : 30
270 : USD 4.0811
N/A

Obsolete
0 - WHS 3

MOQ : 151
Multiples : 1
151 : USD 2.1642
N/A

Obsolete
0 - WHS 4

MOQ : 1
Multiples : 1
1 : USD 6.5231
10 : USD 4.2739
30 : USD 4.0389
120 : USD 3.4833
540 : USD 2.9704
1080 : USD 2.7033
2700 : USD 2.6178
N/A

Obsolete
0 - WHS 5

MOQ : 90
Multiples : 90
90 : USD 2.8011
160 : USD 2.6853
310 : USD 2.6816
760 : USD 2.6775
1600 : USD 2.624
N/A

Obsolete
0 - WHS 6

MOQ : 16
Multiples : 1
16 : USD 2.3967
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Mounting Style
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Continuous Collector Current Ic Max
Brand
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We proudly offer the NGTB35N60FL2WG IGBT Transistors at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the NGTB35N60FL2WG IGBT Transistors.

NGTB35N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast copackaged free wheeling diode with a low forward voltage. www.onsemi.com Features 35 A, 600 V Extremely Efficient Trench with Field Stop Technology T = 175C V = 1.70 V Jmax CEsat Soft Fast Reverse Recovery Diode E = 0.28 mJ OFF Optimized for High Speed Switching C 5 s ShortCircuit Capability These are PbFree Devices Typical Applications G Solar Inverters Uninterruptible Power Supplies (UPS) Welding E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collectoremitter voltage V 600 V CES Collector current I A C G TC = 25C 70 TO247 C TC = 100C 35 CASE 340AL E Diode Forward Current I A F TC = 25C 70 TC = 100C 35 MARKING DIAGRAM Diode Pulsed Current I 120 A FM T Limited by T Max PULSE J Pulsed collector current, T I 120 A pulse CM limited by T Jmax Shortcircuit withstand time t 5 s SC V = 15 V, V = 400 V, GE CE 35N60FL2 T +150C J AYWWG Gateemitter voltage V 20 V GE V Transient gateemitter voltage 30 (T = 5 s, D < 0.10) PULSE Power Dissipation P W D TC = 25C 300 TC = 100C 150 A = Assembly Location Y = Year Operating junction temperature T 55 to +175 C J WW = Work Week range G = PbFree Package Storage temperature range T 55 to +175 C stg Lead temperature for soldering, 1/8 T 260 C SLD ORDERING INFORMATION from case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the Device Package Shipping device. If any of these limits are exceeded, device functionality should not be NGTB35N60FL2WG TO247 30 Units / Rail assumed, damage may occur and reliability may be affected. (PbFree) Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: December, 2016 Rev. 5 NGTB35N60FL2W/DNGTB35N60FL2WG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.50 C/W JC Thermal resistance junctiontocase, for Diode R 1.00 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V 600 V V = 0 V, I = 500 A GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 35 A V 1.50 1.70 2.00 V GE C CEsat V = 15 V, I = 35 A, T = 175C 2.20 GE C J Gateemitter threshold voltage V = V , I = 350 A V 4.5 5.5 6.5 V GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 600 V I 0.2 mA GE CE CES emitter shortcircuited V = 0 V, V = 600 V, T 175C 4.0 GE CE J = Gate leakage current, collectoremitter V = 20 V , V = 0 V I 100 nA GE CE GES shortcircuited DYNAMIC CHARACTERISTIC Input capacitance C 3115 pF ies Output capacitance V = 20 V, V = 0 V, f = 1 MHz C 149 CE GE oes Reverse transfer capacitance C 88 res Gate charge total Q 125 nC g Gate to emitter charge Q 30 V = 480 V, I = 35 A, V = 15 V CE C GE ge Gate to collector charge Q 63 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t 72 ns d(on) Rise time t 40 r Turnoff delay time t 132 T = 25C J d(off) V = 400 V, I = 35 A CC C Fall time t 75 f R = 10 g Turnon switching loss V = 0 V/ 15 V E 0.84 mJ GE on Turnoff switching loss E 0.28 off Total switching loss E 1.12 ts Turnon delay time t 70 ns d(on) Rise time t 38 r Turnoff delay time t 135 T = 150C J d(off) V = 400 V, I = 35 A CC C Fall time t 96 f R = 10 g Turnon switching loss E 1.05 V = 0 V/ 15 V mJ GE on Turnoff switching loss E 0.50 off Total switching loss E 1.55 ts DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 35 A V 1.50 2.20 2.90 V GE F F V = 0 V, I = 35 A, T = 175C 2.25 GE F J Reverse recovery time t 68 ns rr T = 25C J Reverse recovery charge Q 265 nC I = 35 A, V = 200 V F R rr di /dt = 200 A/ s F Reverse recovery current I 7 A rrm Reverse recovery time t 156 ns rr T = 175C J Reverse recovery charge Q 836 nC I = 35 A, V = 400 V rr F R di /dt = 200 A/ s F Reverse recovery current I 8.43 A rrm Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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