X-On Electronics has gained recognition as a prominent supplier of MTB50P03HDLT4G mosfet across the USA, India, Europe, Australia, and various other global locations. MTB50P03HDLT4G mosfet are a product manufactured by ON Semiconductor. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

MTB50P03HDLT4G ON Semiconductor

MTB50P03HDLT4G electronic component of ON Semiconductor
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Part No.MTB50P03HDLT4G
Manufacturer: ON Semiconductor
Category:MOSFET
Description: MOSFET PFET D2PAK 30V 50A 25mOhm
Datasheet: MTB50P03HDLT4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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800: USD 1.7854 ea
Line Total: USD 1428.32

Availability - 0
MOQ: 800  Multiples: 800
Pack Size: 800
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Manufacturer
Product Category
RoHS - XON
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Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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MTB50P03HDL, MVB50P03HDLT4G P-Channel Power MOSFET 2 50 A, 30 V, Logic Level D PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a draintosource diode with a fast recovery time. Designed for MTB50P03HDL, MVB50P03HDLT4G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (C 2.0) (Note 3) V Vdc pk (BR)DSS (V = 0 Vdc, I = 250 Adc) 30 GS D Temperature Coefficient (Positive) 26 mV/C Zero Gate Voltage Drain Current I Adc DSS (V = 30 Vdc, V = 0 Vdc) 1.0 DS GS (V = 30 Vdc, V = 0 Vdc, T = 125C) 10 DS GS J GateBody Leakage Current I nAdc GSS (V = 15 Vdc, V = 0 Vdc) 100 GS DS ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (C 3.0) (Note 3) V Vdc pk GS(th) (V = V , I = 250 Adc) 1.0 1.5 2.0 DS GS D 4.0 mV/C Threshold Temperature Coefficient (Negative) Static DrainSource OnResistance (C 3.0) (Note 3) R m pk DS(on) (V = 5.0 Vdc, I = 25 Adc) 20.9 25 GS D DrainSource OnVoltage (V = 5.0 Vdc) V Vdc GS DS(on) (I = 50 Adc) 0.83 1.5 D (I = 25 Adc, T =125C) 1.3 D J Forward Transconductance g mhos FS (V = 5.0 Vdc, I = 25 Adc) 15 20 DS D DYNAMIC CHARACTERISTICS Input Capacitance C 3500 4900 pF iss Output Capacitance (V = 25 Vdc, V = 0 Vdc, f = 1.0 MHz) C 1550 2170 DS GS oss Transfer Capacitance C 550 770 rss SWITCHING CHARACTERISTICS (Note 2) TurnOn Delay Time t 22 30 ns d(on) Rise Time t 340 466 r (V = 15 Vdc, I = 50 Adc, DD D V = 5.0 Vdc, R = 2.3 ) GS G TurnOff Delay Time t 90 117 d(off) Fall Time t 218 300 f Gate Charge (See Figure 8) Q 74 100 nC T Q 13.6 1 (V = 24 Vdc, I = 50 Adc, DS D V = 5.0 Vdc) GS Q 44.8 2 Q 35 3 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage V Vdc SD (I = 50 Adc, V = 0 Vdc) S GS 2.39 3.0 (I = 50 Adc, V = 0 Vdc, T = 125C) S GS J 1.84 Reverse Recovery Time t 106 ns rr (See Figure 15) t 58 a (I = 50 Adc, V = 0 Vdc, S GS dI /dt = 100 A/ s) S t 48 b Reverse Recovery Stored Charge Q 0.246 C RR INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance L 3.5 nH D (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance L 7.5 nH S (Measured from the source lead 0.25 from package to source bond pad) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. 3. Reflects typical values. Max limit Typ C = pk 3 x SIGMA

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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