MMBT6517LT1G ON Semiconductor

MMBT6517L, NSVMMBT6517L High Voltage Transistor NPN Silicon MMBT6517L, NSVMMBT6517L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V V (BR)CEO (I = 1.0 mA) 350 C Collector Base Breakdown Voltage V V (BR)CBO (I = 100 A) 350 C Emitter Base Breakdown Voltage V V (BR)EBO (I = 10 A) 6.0 E Collector Cutoff Current I nA CBO (V = 250 V) 50 CB Emitter Cutoff Current I nA EBO (V = 5.0 V) 50 EB ON CHARACTERISTICS DC Current Gain h FE (I = 1.0 mA, V = 10 V) 20 C CE (I = 10 mA, V = 10 V) 30 C CE (I = 30 mA, V = 10 V) 30 200 C CE (I = 50 mA, V = 10 V) 20 200 C CE (I = 100 mA, V = 10 V) 15 C CE Collector Emitter Saturation Voltage (Note 3) V V CE(sat) (I = 10 mA, I = 1.0 mA) 0.30 C B (I = 20 mA, I = 2.0 mA) 0.35 C B (I = 30 mA, I = 3.0 mA) 0.50 C B (I = 50 mA, I = 5.0 mA) 1.0 C B Base Emitter Saturation Voltage V V BE(sat) (I = 10 mA, I = 1.0 mA) 0.75 C B (I = 20 mA, I = 2.0 mA) 0.85 C B (I = 30 mA, I = 3.0 mA) 0.90 C B Base Emitter On Voltage V V BE(on) (I = 100 mA, V = 10 V) 2.0 C CE SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f MHz T (I = 10 mA, V = 20 V, f = 20 MHz) 40 200 C CE CollectorBase Capacitance C pF cb (V = 20 V, f = 1.0 MHz) 6.0 CB EmitterBase Capacitance C pF eb (V = 0.5 V, f = 1.0 MHz) 80 EB 3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.