MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G Amplifier Transistors NPN Silicon www.onsemi.com Features COLLECTOR 3 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 1 Qualified and PPAP Capable BASE These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 2 EMITTER 3 SOT23 (TO236) MAXIMUM RATINGS CASE 318 Rating Symbol 6428LT1 6429LT1 Unit 1 STYLE 6 2 CollectorEmitter Voltage V 50 45 Vdc CEO CollectorBase Voltage V 60 55 Vdc CBO EmitterBase Voltage V 6.0 Vdc EBO MARKING DIAGRAM Collector Current Continuous I 200 mAdc C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be XXX M assumed, damage may occur and reliability may be affected. 1 THERMAL CHARACTERISTICS Rating Symbol Value Unit XXX = Specific Device Code MMBT6428LT1 1KM Total Device Dissipation FR5 Board P 225 mW D NSV/MMBT6429LT1 M1L (Note 1) T = 25C A M = Date Code* Derate above 25C 1.8 mW/C = PbFree Package Thermal Resistance, R 556 C/W JA (Note: Microdot may be in either location) JunctiontoAmbient *Date Code orientation and/or overbar may Total Device Dissipation Alumina P 300 mW vary depending upon manufacturing location. D Substrate, (Note 2) T = 25C A Derate above 25C 2.4 mW/C ORDERING INFORMATION Thermal Resistance, R 417 C/W JA JunctiontoAmbient Device Package Shipping Junction and Storage Temperature T , T 55 to +150 C J stg 3000 Tape & MMBT6428LT1G SOT23 1. FR5 = 1.0 0.75 0.062 in. Reel (PbFree) 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3000 Tape & MMBT6429LT1G SOT23 Reel (PbFree) 3000 Tape & NSVMMBT6429LT1G SOT23 Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2017 Rev. 8 MMBT6428LT1/DMMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) MMBT6428 50 C B (I = 1.0 mAdc, I = 0) MMBT6429 / NSVMMBT6429 45 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 0.1 mAdc, I = 0) MMBT6428 60 C E (I = 0.1 mAdc, I = 0) MMBT6429 / NSVMMBT6429 55 C E Collector Cutoff Current I Adc CES (V = 30 Vdc) 0.1 CE Collector Cutoff Current I Adc CBO (V = 30 Vdc, I = 0) 0.01 CB E Emitter Cutoff Current I Adc EBO (V = 5.0 Vdc, I = 0) 0.01 EB C ON CHARACTERISTICS DC Current Gain h FE (I = 0.01 mAdc, V = 5.0 Vdc) MMBT6428 250 C CE MMBT6429 / NSVMMBT6429 500 (I = 0.1 mAdc, V = 5.0 Vdc) MMBT6428 250 650 C CE MMBT6429 / NSVMMBT6429 500 1250 (I = 1.0 mAdc, V = 5.0 Vdc) MMBT6428 250 C CE MMBT6429 / NSVMMBT6429 500 (I = 10 mAdc, V = 5.0 Vdc) MMBT6428 250 C CE MMBT6429 / NSVMMBT6429 500 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 0.5 mAdc) 0.2 C B (I = 100 mAdc, I = 5.0 mAdc) 0.6 C B BaseEmitter On Voltage V Vdc BE(on) (I = 1.0 mAdc, V = 5.0 Vdc) 0.56 0.66 C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 1.0 mAdc, V = 5.0 Vdc, f = 100 MHz) 100 700 C CE Output Capacitance C pF obo (V = 10 Vdc, I = 0, f = 1.0 MHz) 3.0 CB E Input Capacitance C pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) 8.0 EB C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. R S i n e n IDEAL TRANSISTOR Figure 1. Transistor Noise Model www.onsemi.com 2