MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G Amplifier Transistors NPN Silicon MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) MMBT6428 50 C B (I = 1.0 mAdc, I = 0) MMBT6429 / NSVMMBT6429 45 C B Collector Base Breakdown Voltage V Vdc (BR)CBO (I = 0.1 mAdc, I = 0) MMBT6428 60 C E (I = 0.1 mAdc, I = 0) MMBT6429 / NSVMMBT6429 55 C E Collector Cutoff Current I Adc CES (V = 30 Vdc) 0.1 CE Collector Cutoff Current I Adc CBO (V = 30 Vdc, I = 0) 0.01 CB E Emitter Cutoff Current I Adc EBO (V = 5.0 Vdc, I = 0) 0.01 EB C ON CHARACTERISTICS DC Current Gain h FE (I = 0.01 mAdc, V = 5.0 Vdc) MMBT6428 250 C CE MMBT6429 / NSVMMBT6429 500 (I = 0.1 mAdc, V = 5.0 Vdc) MMBT6428 250 650 C CE MMBT6429 / NSVMMBT6429 500 1250 (I = 1.0 mAdc, V = 5.0 Vdc) MMBT6428 250 C CE MMBT6429 / NSVMMBT6429 500 (I = 10 mAdc, V = 5.0 Vdc) MMBT6428 250 C CE MMBT6429 / NSVMMBT6429 500 Collector Emitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 0.5 mAdc) 0.2 C B (I = 100 mAdc, I = 5.0 mAdc) 0.6 C B Base Emitter On Voltage V Vdc BE(on) (I = 1.0 mAdc, V = 5.0 mAdc) 0.56 0.66 C CE SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f MHz T (I = 1.0 mAdc, V = 5.0 Vdc, f = 100 MHz) 100 700 C CE Output Capacitance C pF obo (V = 10 Vdc, I = 0, f = 1.0 MHz) 3.0 CB E Input Capacitance C pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) 8.0 EB C R S i n e n IDEAL TRANSISTOR Figure 1. Transistor Noise Model