ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. MMBT6428 MMBT6428 NPN General Purpose Amplifier 3 This device designed for general pupose amplifier applications at collector currents to 300mA Sourced from process 10. 2 SOT-23 1 Mark: 1K 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* T =25C unless otherwise noted C Symbol Parameter Value Units V Collector-Emitter Voltage 50 V CEO V Collector-Base Voltage 60 V CBO I Collector Current - Continuous 500 mA C T , T Operating and Storage Junction Temperature Range - 55 ~ 150 C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. Electrical Characteristics T =25C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Collector-Emitter Breakdown Voltage * I = 1.0mA, I = 0 50 V (BR)CEO C B V Collector-Base BreakdownVoltage I = 100A, I = 0 60 V (BR)CBO C E I Collector Cut-off Current V = 30V, I = 0 0.1 A CEO CE B I Collector Cut-off Current V = 30V, I = 0 10 nA CBO CB E I Emitter Cut-off Current V = 5.0V, I = 0 10 nA EBO EB B On Characteristics h DC Current Gain V = 5.0V, I = 10A 250 FE CE C V = 5.0V, I = 100A 250 650 CE C V = 5.0V, I = 1.0mA 250 CE C V = 5.0V, I = 10mA 250 CE C V (sat) Collector-Emitter Saturation Voltage I = 10mA, I = 0.5mA 0.2 V CE C B I = 100mA, I = 5.0mA 0.6 C B V (on) Base-Emitter On Voltage V = 5.0V, I = 1.0mA 0.56 0.66 V BE CE C Small Signal Characteristics f Current gain Bandwidth Product V = 5.0V, I = 1.0mA, 100 700 MHz T CE C f = 100MHz C Output Capacitance V = 10V, I = 0, f = 1.0MHz 3.0 pF obo CB E C Input Capacitance V = 0.5V, I = 0, f = 1.0MHz 8.0 pF ibo EB C *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Publication Order Number: 2002 Semiconductor Components Industries, LLC. MMBT6428/D October-2017,Rev 1