Switch-mode Schottky Power Rectifier MBRF2545CTG The Switchmode Power Rectifier employs the Schottky Barrier principle in a large area metal to silicon power diode. Stateoftheart geometry features epitaxial construction with oxide www.onsemi.com passivation and metal overlay contact. Ideally suited for use as rectifiers in very lowvoltage, highfrequency switching power supplies, free wheeling diodes and polarity protection diodes. SCHOTTKY BARRIER RECTIFIER Features 25 AMPERES, 45 VOLTS Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop Matched Dual Die Construction 1 High Junction Temperature Capability 2 3 High dv/dt Capability Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection MARKING Epoxy Meets UL 94 V0 0.125 in DIAGRAM Electrically Isolated No Isolation Hardware Required These Devices are PbFree and are RoHS Compliant Mechanical Characteristics: AYWW Case: Epoxy, Molded B2545G AKA Weight: 1.9 Grams (Approximately) 1 2 Finish: All External Surfaces Corrosion Resistant and Terminal 3 Leads are Readily Solderable TO220 FULLPAK Lead Temperature for Soldering Purposes: CASE 221D 260C Max. for 10 Seconds A = Assembly Location Y = Year WW = Work Week B2545 = Device Code G = PbFree Package AKA = Diode Polarity ORDERING INFORMATION Device Package Shipping MBRF2545CTG TO220 50 Units/Rail (PbFree) Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2020 Rev. 10 MBRF2545CT/DMBRF2545CTG MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 45 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I 12.5 A F(AV) (Rated V ), T = 125C Total Device 25 R C Peak Repetitive Forward Current I A FRM (Rated V , Square Wave, 20 kHz), T = 125C 25 R C Nonrepetitive Peak Surge Current I A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) 150 Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) I 1.0 A RRM Operating Junction and Storage Temperature (Note 1) T , T 65 to +175 C J stg Voltage Rate of Change (Rated V ) dv/dt 10000 V/ s R RMS Isolation Voltage (t = 0.3 second, R.H. 30%, T = 25C) (Note 2) Per Figure 3 V 4500 V A iso1 THERMAL CHARACTERISTICS (Per Leg) Maximum Thermal Resistance, Junction toCase R 3.5 C/W JC Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds T 260 C L ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Symbol Max Unit Maximum Instantaneous Forward Voltage (Note 3) v V F (i = 12.5 A, T = 25C) 0.7 F C (i = 12.5 A, T = 125C) 0.62 F C Maximum Instantaneous Reverse Current (Note 3) i mA R (Rated DC Voltage, T = 25C) 0.2 C (Rated DC Voltage, T = 125C) 40 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA 2. Proper strike and creepage distance must be provided. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. 100 100 70 50 T = 125C J 10 T = 125C J 20 25C 10 100 C 100C 7.0 1.0 5.0 85C 2.0 0.1 1.0 0.7 0.5 25C 0.01 0.2 0.1 0.001 0 0.2 0.4 0.6 0.8 1.0 02100304050 v , INSTANTANEOUS VOLTAGE (VOLTS) V , REVERSE VOLTAGE (VOLTS) F R Figure 1. Typical Forward Voltage, Per Leg Figure 2. Typical Reverse Current, Per Leg www.onsemi.com 2 , INSTANTANEOUS FORWARD CURRENT (AMPS) i F I , REVERSE CURRENT (mA) R