X-On Electronics has gained recognition as a prominent supplier of MBR2H100SFT3G schottky diodes & rectifiers across the USA, India, Europe, Australia, and various other global locations. MBR2H100SFT3G schottky diodes & rectifiers are a product manufactured by ON Semiconductor. We provide cost-effective solutions for schottky diodes & rectifiers, ensuring timely deliveries around the world.

MBR2H100SFT3G ON Semiconductor

MBR2H100SFT3G electronic component of ON Semiconductor
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See Product Specifications
Part No.MBR2H100SFT3G
Manufacturer: ON Semiconductor
Category:Schottky Diodes & Rectifiers
Description: ON Semiconductor Schottky Diodes & Rectifiers 2A 100V
Datasheet: MBR2H100SFT3G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10000: USD 0.1442 ea
Line Total: USD 1442

Availability - 0
MOQ: 10000  Multiples: 10000
Pack Size: 10000
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 10000
Multiples : 10000
10000 : USD 0.1061
20000 : USD 0.1018

0 - WHS 2


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 10000
Multiples : 10000
10000 : USD 0.1433

0 - WHS 3


Ships to you between
Fri. 14 Jun to Wed. 19 Jun

MOQ : 1
Multiples : 1
1 : USD 0.2359
10 : USD 0.199
30 : USD 0.1832
100 : USD 0.1674
500 : USD 0.1568
1000 : USD 0.1505

0 - WHS 4


Ships to you between Thu. 13 Jun to Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 1.3599
10 : USD 0.5814
100 : USD 0.2535
500 : USD 0.235
1000 : USD 0.1601
2500 : USD 0.1416
10000 : USD 0.1262

0 - WHS 5


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 10000
Multiples : 10000
10000 : USD 0.1161
20000 : USD 0.1092

0 - WHS 6


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 10000
Multiples : 10000
10000 : USD 0.1114

0 - WHS 7


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 10000
Multiples : 10000
10000 : USD 0.1114

0 - WHS 8


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 10000
Multiples : 10000
10000 : USD 0.1502
20000 : USD 0.1473

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
Packaging
Brand
Factory Pack Quantity :
Operating Temperature Range
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
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We are delighted to provide the MBR2H100SFT3G from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MBR2H100SFT3G and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

MBR2H100SFT3G, NRVB2H100SFT3G Schottky Power Rectifier, Surface Mount 2.0 A, 100 V, SOD-123FL Package MBR2H100SFT3G, NRVB2H100SFT3G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 100 V RRM V RWM Working Peak Reverse Voltage V R DC Blocking Voltage Average Rectified Forward Current I 2.0 A O (T = 146C) L NonRepetitive Peak Surge Current I 50 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage and Operating Junction Temperature Range (Note 1) T , T 65 to +175 C stg J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoLead (Note 2) 23 C/W JCL Thermal Resistance, JunctiontoAmbient (Note 2) 85 C/W R JA Thermal Resistance, JunctiontoAmbient (Note 3) R 330 C/W JA ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit V V Maximum Instantaneous Forward Voltage (Note 4) F 0.76 (I = 1.0 A, T = 25C) F J 0.84 (I = 2.0 A, T = 25C) F J 0.61 (I = 1.0 A, T = 125C) F J 0.68 (I = 2.0 A, T = 125C) F J Maximum Instantaneous Reverse Current (Note 4) I R (Rated dc Voltage, T = 25C) 40 A J (Rated dc Voltage, T = 125C) 0.5 mA J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2 2 2. Mounted with 700 mm copper pad size (Approximately 1 in ) 1 oz FR4 Board. 2 3. Mounted with pad size approximately 20 mm copper, 1 oz FR4 Board. 4. Pulse Test: Pulse Width 380 s, Duty Cycle 2.0%.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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