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FQA46N15 N-Channel QFET MOSFET May 2014 FQA46N15 N-Channel QFET MOSFET 150 V, 50 A, 42 m Features Description 50 A, 150 V, R = 42 m (Max) V = 10 V, I = 25 A This N-Channel enhancement mode power MOSFET is DS(on) GS D produced using Fairchild Semiconductors proprietary planar Low Gate Charge (Typ. 85 nC) stripe and DMOS technology. This advanced MOSFET Low Crss (Typ. 100 pF) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and 100% Avalanche Tested high avalanche energy strength. These devices are suitable for 175C Maximum Junction Temperature Rating switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. D G G D TO-3PN S S Absolute Maximum Ratings TC = 25C unless otherwise noted. Symbol Parameter FQA46N15 Unit V Drain-Source Voltage 150 V DSS I Drain Current - Continuous (T = 25C) 50 A D C - Continuous (T = 100C) 35.3 A C (Note 1) I Drain Current - Pulsed 200 A DM V Gate-Source Voltage 25 V GSS (Note 2) E Single Pulsed Avalanche Energy 650 mJ AS (Note 1) I Avalanche Current 50 A AR (Note 1) E Repetitive Avalanche Energy 25 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 6.0 V/ns P Power Dissipation (T = 25C) 250 W D C - Derate above 25C 1.67 W/C T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum Lead Temperature for Soldering, T 300 C L 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter Unit FQA46N15 R Thermal Resistance, Junction-to-Case, Max. 0.6 C/W JC R Thermal Resistance, Case-to-Sink, Typ. 0.24 C/W CS R Thermal Resistance, Junction-to-Ambient, Max. 40 C/W JA www.fairchildsemi.com 2009 Fairchild Semiconductor Corporation 1 FQA46N15 Rev C2