DATA SHEET www.onsemi.com MOSFET N-Channel, Pin 1 POWERTRENCH Pin 1 S S S G 80 V, 130 A, 2.4 m D D D D FDMS86350 Top Bottom PQFN8 5X6, 1.27P Description CASE 483AG This NChannel MOSFET is produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize the onstate resistance and yet maintain superior switching ELECTRICAL CONNECTION performance. Features SD18 Max R = 2.4 m at V = 10 V, I = 25 A DS(on) GS D Max R = 3.2 m at V = 8 V, I = 22 A DS(on) GS D SD27 Advanced Package and Silicon Combination for Low R and DS(on) High Efficiency SD36 MSL1 Robust Package Design 100% UIL Tested GD45 RoHS Compliant These Device is Halogen Free MARKING DIAGRAM Applications Primary MOSFET Synchronous Rectifier Y&Z&3&K FDMS Load Switch 86350 Motor Control Switch Y = Logo MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) A &Z = Assembly Location &3 = Date Code (Year and Week) Symbol Parameter Ratings Unit &K = Lot Run Traceability Code V Drain to Source Voltage 80 V DS FDMS = Specific Device Code 86350 = Specific Device Code V Gate to Source Voltage 20 V GS I Drain Current A D Continuous T = 25C 130 C ORDERING INFORMATION Continuous T = 25C (Note 1a) 25 A Pulsed (Note 4) 300 See detailed ordering and shipping information on page 3 of this data sheet. E Single Pulse Avalanche Energy 864 mJ AS (Note 3) P Power Dissipation, T = 25C 156 W D C Power Dissipation, T = 25C 2.7 A (Note 1a) T , T Operating and Storage Junction 55 to +150 C J STG Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Publication Order Number: Semiconductor Components Industries, LLC, 2013 1 FDMS86350/D October, 2021 Rev. 3FDMS86350 THERMAL CHARACTERISTICS Symbol Parameter Rating Unit R Thermal Resistance, Junction to Case 0.8 C/W JC R Thermal Resistance, Junction to Ambient (Note 1a) 45 JA ELECTRICAL CHARACTERISTICS T = 25C unless otherwise noted J Symbol Parameter Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage I = 250 A, V = 0 V 80 V DSS D GS BV Breakdown Voltage Temperature I = 250 A, referenced to 25C 45 mV/C DSS D Coefficient T J I Zero Gate Voltage Drain Current V = 64 V, V = 0 V 1 A DSS DS GS I Gate to Source Leakage Current V = 20 V, V = 0 V 100 nA GSS GS DS ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 250 A 2.5 3.8 4.5 V GS(th) GS DS D V Gate to Source Threshold Voltage I = 250 A, referenced to 25C 12 mV/C GS(th) D Temperature Coefficient T J R Static Drain to Source On Resistance V = 10 V, I = 25 A 2.0 2.4 m DS(ON) GS D V = 8 V, I = 22 A 2.5 3.2 GS D V = 10 V, I = 25 A, T = 125C 3.1 3.8 GS D J g Forward Transconductance V = 5 V, I = 25 A 70 S FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance V = 40 V, V = 0 V, 8030 10680 pF ISS DS GS f = 1 MHz C Output Capacitance 1370 1825 pF OOS Crss Reverse Transfer Capacitance 31 50 pF R Gate Resistance 0.1 1.1 3 g SWITCHING CHARACTERISTICS t TurnOn Delay Time V = 40 V, I = 25 A, 50 80 ns d(on) DD D V = 10 V, R = 6 GS GEN t Rise Time 34 55 ns r t TurnOff Delay Time 40 65 ns d(off) t Fall Time 11 20 ns f Q Total Gate Charge V = 0 V to 10 V V = 40 V, 110 155 nC g GS DD I = 25 A D Q Total Gate Charge V = 0 V to 8 V 90 127 nC g GS Qgs Gate to Source Charge 46 nC Qgd Gate to Drain Miller Charge 23 nC DRAINSOURCE DIODE CHARACTERISTICS I Diode Continuous Forward Current T = 25C 130 A S C I Diode Pulse Current T = 25C 300 A S, pulse C V Source to Drain Diode Forward V = 0 V, I = 2.1 A (Note 2) 0.71 1.2 V SD GS S Voltage V = 0 V, I = 25 A (Note 2) 0.79 1.3 GS S t Reverse Recovery Time I = 25 A, di/dt = 100 A/ s 63 101 ns rr F Q Reverse Recovery Charge 62 100 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2