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FDMS86102LZ N-Channel Shielded Gate PowerTrench MOSFET October 2014 FDMS86102LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 22 A, 25 m Features General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process Max r = 25 m at V = 10 V, I = 7 A DS(on) GS D that incorporates Shielded Gate technology. This process has Max r = 37 m at V = 4.5 V, I = 5.8 A been optimized for the on-state resistance and yet maintain DS(on) GS D superior switching performance. G-S zener has been added to HBM ESD protection level > 6 KV typical (Note 4) enhance ESD voltage level. 100% UIL Tested Applications RoHS Compliant DC - DC Conversion Inverter Synchronous Rectifier Bottom Top Pin 1 S S D S S G S D D S D D D G D D Power 56 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25 C 22 C I -Continuous T = 25 C (Note 1a) 7 A D A -Pulsed 40 E Single Pulse Avalanche Energy (Note 3) 84 mJ AS Power Dissipation T = 25 C 69 C P W D Power Dissipation T = 25 C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.8 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS86102Z FDMS86102LZ Power 56 13 12 mm 3000 units 2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMS86102LZ Rev.C2