X-On Electronics has gained recognition as a prominent supplier of CPH6538-TL-H bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. CPH6538-TL-H bipolar transistors - bjt are a product manufactured by ON Semiconductor. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

CPH6538-TL-H

CPH6538-TL-H electronic component of ON Semiconductor
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See Product Specifications
Part No.CPH6538-TL-H
Manufacturer: ON Semiconductor
Category:Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN+NPN 0.7A 30V
Datasheet: CPH6538-TL-H Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2914: USD 0.1489 ea
Line Total: USD 433.89

Availability - 0
MOQ: 2914  Multiples: 2914
Pack Size: 2914
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 2914
Multiples : 2914
2914 : USD 0.1489

0 - WHS 2


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.1665

     
Manufacturer
Product Category
Transistor Polarity
Packaging
Collector Current Dc
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Power Dissipation
Pin Count
Mounting
Operating Temperature Classification
Operating Temp Range
Rad Hardened
Number Of Elements
Category
Package Type
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Ordering number : ENA1757A CPH6538 Bipolar Transistor CPH6538 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =30V, I =0A 100 nA CBO CB E Emitter Cutoff Current I V =4V, I =0A 100 nA EBO EB C DC Current Gain h V =2V, I =50mA 300 800 FE CE C Gain-Bandwidth Product f V =2V, I =50mA 540 MHz T CE C Output Capacitance Cob V =10V, f=1MHz 3.3 pF CB Collector-to-Emitter Saturation Voltage V (sat) I =200mA, I =10mA 85 190 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =200mA, I =10mA 0.9 1.2 V BE C B Collector-to-Base Breakdown Voltage V I =10A, I =0A 40 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =1mA, R = 30 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =10A, I =0A 5 V (BR)EBO E C Turn-On Time t 35 ns on Storage Time t See speci ed Test Circuit. 255 ns stg Fall Time t 40 ns f Switching Time Test Circuit I B1 PW=20s OUTPUT D.C.1% I B2 INPUT R B V R R L 50 + + 220F 470F V = --5V V =12V BE CC 20I 1= --20I 2=I =300mA B B C Ordering Information Device Package Shipping memo CPH6538-TL-H CPH6 3,000pcs./reel Pb Free and Halogen Free I -- V I -- V C CE C BE 700 800 V =2V CE 700 600 600 500 500 400 400 300 300 400A 200 200 200A 100 100 I =0A B 0 0 0 100 200 300 400 500 600 700 800 900 1000 0 0.2 0.4 0.6 0.8 1.0 Collector-to-Emitter Voltage, V -- mV IT05083 IT05082 Base-to-Emitter Voltage, V -- V CE BE No. A1757-2/6 1mA 3mA 2mA 7mA 5mA 10mA 50mA 20mA 30mA 15mA Ta=75C 25C --25C Collector Current, I -- mA C Collector Current, I -- mA C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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