Ordering number : ENA0114B CPH3360 P-Channel Power MOSFET CPH3360 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V I =--1mA, V =0V --30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--30V, V =0V --1 A DSS DS GS Gate to Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --1.2 --2.6 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--0.8A 1.3 S DS D R (on)1 I =--0.8A, V =--10V 233 303 m DS D GS Static Drain to Source On-State Resistance R (on)2 I =--0.4A, V =--4.5V 380 532 m DS D GS R (on)3 I =--0.4A, V =--4V 441 617 m DS D GS Input Capacitance Ciss 82 pF Output Capacitance Coss V =--10V, f=1MHz 22 pF DS Reverse Transfer Capacitance Crss 16 pF Turn-ON Delay Time t (on) 4.0 ns d Rise Time t 3.3 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 12 ns d Fall Time t 5.4 ns f Total Gate Charge Qg 2.2 nC Gate to Source Charge Qgs V =--15V, V =--10V, I =--1.6A 0.36 nC DS GS D Gate to Drain Miller Charge Qgd 0.49 nC Diode Forward Voltage V I =--1.6A, V =0V --0.9 --1.5 V SD S GS Switching Time Test Circuit V V = --15V IN DD 0V --10V I = --0.8A D V IN R =18.75 L D V OUT PW=10s D.C.1% G CPH3360 P.G 50 S Ordering Information Device Package Shipping memo CPH3360-TL-H CPH3 3,000pcs./reel Pb-Free and Halogen Free No. A0114-2/6