BC63916 NPN Epitaxial Silicon Transistor
BC63916
NPN Epitaxial Silicon Transistor
Features
Switching and Amplifier Applications
TO-92
1. Emitter
2. Collector
1 1
2 3. Base
3 2
3
Straight Lead Bent Lead
Bulk Packing Tape & Reel
Ammo Packing
Ordering Information
Part Number Top Mark Package Packing Method
BC63916-D74Z BC639-16 TO-92 3L Ammo
BC63916-D27Z BC639-16 TO-92 3L Tape and Reel
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Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted.
A
Symbol Parameter Value Unit
V Collector-Emitter Voltage at R = 1 k 100 V
CER BE
V Collector-Emitter Voltage 100 V
CES
V Collector-Emitter Voltage 80 V
CEO
V Emitter-Base Voltage 5 V
EBO
I Collector Current 1 A
C
T , T Operating and Storage Junction Temperature Range -55 to 150 C
J STG
Note:
1. Pulse test: pulse width 300 s, duty cycle 2.0%.
2003 Semiconductor Components Industries, LLC. Publication Order Number:
BC63916-D74Z/D
September-2017, Rev. 2BC63916 NPN Epitaxial Silicon Transistor
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Thermal Characteristics
Values are at T = 25C unless otherwise noted.
A
Symbol Parameter Value Unit
Power Dissipation 830 mW
P
D
Derate Above T = 25C 6.6 mW/C
A
R Thermal Resistance, Junction to Ambient 150 C/W
JA
Note:
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at T = 25C unless otherwise noted.
A
Symbol Parameter Conditions Min. Typ. Max. Unit
BV Collector-Base Breakdown Voltage I = 100 A, I = 0 100 V
CBO C E
BV Collector-Emitter Breakdown Voltage I = 10 mA, I = 0 80 V
CEO C B
BV Emitter-Base Breakdown Voltage I = 10 A, I = 0 5.0 V
EBO E C
I Collector Cut-Off Current V = 30 V, I = 0 100 nA
CBO CB E
I Emitter Cut-Off Current V = 5 V, I = 0 10 A
EBO EB C
h 1 V = 2 V, I = 5 mA 25
FE CE C
h2VDC Current Gain = 2 V, I = 150 mA 100 250
FE CE C
h3V = 2 V, I = 500 mA 25
FE CE C
V (sat) Collector-Emitter Saturation Voltage I = 500 mA, I = 50 mA 0.5 V
CE C B
V (on) Base-Emitter On Voltage V = 2 V, I = 500 mA 1 V
BE CE C
V = 5 V, I = 10 mA,
CE C
f Current Gain Bandwidth Product 100 MHz
T
f = 50 MHz
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