2N6426G ON Semiconductor

2N6426, 2N6427 2N6426 is a Preferred Device Darlington Transistors NPN Silicon Features These are PbFree Devices* 2N6426, 2N6427 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage, (Note 1) V 40 Vdc (BR)CEO (I = 10 mAdc, V = 0) C BE CollectorBase Breakdown Voltage V 40 Vdc (BR)CBO (I = 100 Adc, I = 0) C E EmitterBase Breakdown Voltage V 12 Vdc (BR)EBO (I = 10 Adc, I = 0) E C Collector Cutoff Current I 1.0 Adc CES (V = 25 Vdc, I = 0) CE B Collector Cutoff Current I 50 nAdc CBO (V = 30 Vdc, I = 0) CB E Emitter Cutoff Current I 50 nAdc EBO (V = 10 Vdc, I = 0) EB C ON CHARACTERISTICS DC Current Gain, (Note 1) h FE (I = 10 mAdc, V = 5.0 Vdc) 2N6426 20,000 200,000 C CE 2N6427 10,000 100,000 (I = 100 mAdc, V = 5.0 Vdc) 2N6426 30,000 300,000 C CE 2N6427 20,000 200,000 (I = 500 mAdc, V = 5.0 Vdc) 2N6426 20,000 200,000 C CE 2N6427 14,000 140,000 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 50 mAdc, I = 0.5 mAdc) 0.71 1.2 C B (I = 500 mAdc, I = 0.5 mAdc 0.9 1.5 C B BaseEmitter Saturation Voltage V 1.52 2.0 Vdc BE(sat) (I = 500 mAdc, I = 0.5 mAdc) C B BaseEmitter On Voltage V 1.24 1.75 Vdc BE(on) (I = 50 mAdc, V = 5.0 Vdc) C CE SMALLSIGNAL CHARACTERISTICS Output Capacitance C 5.4 7.0 pF obo (V = 10 Vdc, I = 0, f = 1.0 MHz) CB E Input Capacitance C 10 15 pF ibo (V = 1.0 Vdc, I = 0, f = 1.0 MHz) EB C Input Impedance h k ie (I = 10 mAdc, V = 5.0 Vdc, f = 1.0 kHz) 2N6426 100 2000 C CE 2N6427 50 1000 SmallSignal Current Gain hfe (I = 10 mAdc, V = 5.0 Vdc, f = 1.0 kHz) 2N6426 20,000 C CE 2N6427 10,000 CurrentGain High Frequency h fe (I = 10 mAdc, V = 5.0 Vdc, f = 100 MHz) 2N6426 1.5 2.4 C CE 2N6427 1.3 2.4 Output Admittance h 1000 mhos oe (I = 10 mAdc, V = 5.0 Vdc, f = 1.0 kHz) C CE Noise Figure NF 3.0 10 dB (I = 1.0 mAdc, V = 5.0 Vdc, R = 100 k , f = 1.0 kHz) C CE S 1. Pulse Test: Pulse Width 300 s Duty Cycle 2.0%.