The 2N3906G is an NPN Bipolar Junction Transistor (BJT) from ON Semiconductor. It is designed to be used in low-power, general-purpose switching and amplifier applications. It has a maximum DC collector current of 200 mA, a maximum DC collector-base voltage of 40 V, a maximum DC emitter-base voltage of 5 V, and an amplification factor of 400-600. The 2N3906G is available in three different packages: Micro-8 (TO-92) , SOT-23, and SOT-223. The maximum power dissipation is 625 mW with minimal thermal resistance. The transistor is capable of operating in both pre-biased and e-bias applications. It also has a minimum hFE of 40.