Product Information

1.5SMC10AT3G

1.5SMC10AT3G electronic component of ON Semiconductor

Datasheet
TVS Diodes - Transient Voltage Suppressors 10V 1500W UNIDIR

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

1.5SMC10AT3G
ON Semiconductor

1 : USD 1.8123
10 : USD 0.88
100 : USD 0.4909
500 : USD 0.3873
1000 : USD 0.3107
2500 : USD 0.2817
5000 : USD 0.2723
N/A

Obsolete
0 - WHS 2

MOQ : 2500
Multiples : 2500

Stock Image

1.5SMC10AT3G
ON Semiconductor

2500 : USD 0.3342
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Voltage
Peak Surge Current
Brand
Mounting Style
Peak Pulse Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Subcategory
Taric
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TVS Diodes Surface Mount > 1500W > 1.5SMCxxAT3G Pb 1.5SMCxxAT3G Description The 1.5SMCxxAT3G series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. This 1.5SMCxxAT3G series is provided in an SMC package ideally suited for small form factor requirements found in communication , automotive, process control, medical equipment and many other industrial and consumer applications. Features Working Peak Reverse Voltage Range 5.8 V to 78 V Maximum Ratings and Thermal Characteristics Nominal Breakdown Voltage Range 6.8 V to 91V Parameter Symbol Value Unit Peak Power 1500 W 1 ms Peak Power Dissipation (Note 1) T = L ESD Rating of Class 3 (> 16 kV) per Human Body Model P 1500 W PK 25C, Pulse Width = 1 ms Low Leakage < 5 A Above 10 V DC Power Dissipation T = 75C L PD W 4.0 Maximum Temperature Coefficient Specified Measured Zero Lead Length (Note 2) Derate Above 75C 54.6 mW/C Response Time is Typically < 1 ns Bi-directional Thermal Resistance from Junctionto R 18.3 C/W JL Lead Bi-directional PbFree Packages are Available DC Power Dissipation (Note 3) T = A P 0.75 W D 25C Derate Above 25C Functional Diagram 6.1 mW/C Thermal Resistance from Junction R 165 C/W JA Cathode to Ambient Anode Cathode Anode Forward Surge Current (Note 4) I 200 A FSM T = 25C A Additional Information Operating and Storage -65 to Uni-directional T T C J, stg Temperature Range +150 Uni-directional Stresses exceeding Maximum Ratings may damage the component. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions Samples Datasheet Resources may affect component reliability. 1. 10 x 1000 s, nonrepetitive. 2. 1 in square copper pad, FR4 board. 3. FR4 board, using Littelfuse minimum recommended footprint, as shown in 403-03 case outline dimensions spec. 4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/23/18TVS Diodes Surface Mount > 1500W > 1.5SMCxxAT3G I-V Curve Characteristics (T = 25C unless otherwise noted, V = 3.5 V Max I = 100 A) (Note 5) A F F Symbol Parameter I I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM I Maximum Reverse Leakage Current V R RWM V V Breakdown Voltage I BR T I Test Current T I Forward Current F V Forward Voltage I F F 5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, nonrepetitive duty cycle. 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/23/18

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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