DocumentNumber:MD7IC2251N
FreescaleSemiconductor
Rev.0,5/2012
TechnicalData
RFLDMOSWidebandIntegrated
PowerAmplifiers
MD7IC2251NR1
The MD7IC2251N wideband integrated circuit is designed with on--chip
MD7IC2251GNR1
matchingthatmakesit usablefrom2110--2170MHz. Thismulti--stage
structure is rated for 26 to 32 volt operation and covers all typical cellular
base station modulation formats.
TypicalDoherty Single--Carrier W--CDMA CharacterizationPerformance:
V =28Volts,I =80mA,I = 260mA, V =1.4Vdc,
2110--2170MHz,12WAVG.,28V
DD DQ1(A+B) DQ2A GS2B
P = 12Watts Avg., IQ MagnitudeClipping, ChannelBandwidth= 3.84MHz,
SINGLEW--CDMA
out
Input SignalPAR = 9.9dB @ 0.01%Probability onCCDF.
RFLDMOSWIDEBAND
INTEGRATEDPOWERAMPLIFIERS
G PAE OutputPAR ACPR
ps
Frequency (dB) (%) (dB) (dBc)
2110MHz 28.8 38.2 7.1 --34.6
TO--270WB--14
PLASTIC
2140MHz 29.0 37.9 7.1 --36.2
MD7IC2251NR1
2170MHz 29.2 37.4 6.9 --36.1
Capableof Handling10:1VSWR, @32Vdc, 2140MHz, 63Watts CW
Output Power (3dB Input Overdrivefrom RatedP )
out
TO--270WB--14GULL
(1)
Typical P @3dB CompressionPoint 58Watts
out
PLASTIC
Features
MD7IC2251GNR1
100%PAR Testedfor GuaranteedOutput Power Capability
ProductionTestedinaSymmetricalDoherty Configuration
CharacterizedwithLarge--SignalLoad--PullParameters andCommonSourceS--Parameters
On--ChipMatching(50Ohm Input, DC Blocked)
(2)
IntegratedQuiescent Current TemperatureCompensationwithEnable/DisableFunction
IntegratedESD Protection
225C CapablePlastic Package
InTapeandReel. R1Suffix = 500Units, 44mm TapeWidth, 13inchReel.
V
DS1A
(3) Carrier
CARRIER
V 1
DS1A
V 2
GS2A
RF
RF /V
inA out1 DS2A
14
V 3
GS1A
RF /V
out1 DS2A
RF 4
inA
NC 5
NC 6
V
GS1A
QuiescentCurrent
NC 7
(2)
V TemperatureCompensation
GS2A
NC 8
RF
9 13 RF /V
inB out2 DS2B
V
GS1B
QuiescentCurrent
V 10
GS1B
(2)
V
TemperatureCompensation V 11
GS2B GS2B
V 12 Peaking
DS1B
(3)
PEAKING
(TopView)
RF
inB
RF /V
out2 DS2B
Note: Exposed backside of the package is
V
thesourceterminalforthetransistors.
DS1B
Figure1.FunctionalBlockDiagram Figure2.PinConnections
1. P3dB=P +7.0dBwhereP istheaverageoutputpowermeasuredusinganunclippedW--CDMAsingle--carrierinputsignalwhereoutput
avg avg
PARis compressedto7.0dB @0.01%probability onCCDF.
2. RefertoAN1977,QuiescentCurrentThermalTrackingCircuitintheRFIntegratedCircuitFamilyandtoAN1987,QuiescentCurrentControl
fortheRFIntegratedCircuitDeviceFamily.GotoTable1.MaximumRatings
Rating Symbol Value Unit
Drain--SourceVoltage V --0.5,+65 Vdc
DS
Gate--SourceVoltage V --0.5,+10 Vdc
GS
OperatingVoltage V 32,+0 Vdc
DD
StorageTemperatureRange T --65to+150 C
stg
CaseOperatingTemperature T 150 C
C
(1,2)
OperatingJunctionTemperature T 225 C
J
InputPower P 28 dBm
in
Table2.ThermalCharacteristics
(2,3)
Characteristic Symbol Value Unit
FinalDohertyApplication
ThermalResistance,JunctiontoCase R C/W
JC
CaseTemperature78C,P =12WCW
out
Stage1,28Vdc,I =80mA 4.8
DQ1(A+B)
Stage2,28Vdc,I =260mA,V =1.4Vdc 1.5
DQ2A GS2B
CaseTemperature89C,P =50WCW
out
Stage1,28Vdc,I =80mA 3.7
DQ1(A+B)
Stage2,28Vdc,I =260mA,V =1.4Vdc 1.0
DQ2A GS2B
Table3.ESDProtectionCharacteristics
TestMethodology Class
HumanBody Model(perJESD22--A114) 1A
MachineModel(perEIA/JESD22--A115) A
ChargeDeviceModel(perJESD22--C101) II
Table4.MoistureSensitivityLevel
TestMethodology Rating PackagePeakTemperature Unit
PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C
Table5.ElectricalCharacteristics (T =25Cunless otherwisenoted)
A
Characteristic Symbol Min Typ Max Unit
(4)
Stage1 -- OffCharacteristics
ZeroGateVoltageDrainLeakageCurrent I 10 Adc
DSS
(V =65Vdc,V =0Vdc)
DS GS
ZeroGateVoltageDrainLeakageCurrent I 1 Adc
DSS
(V =28Vdc,V =0Vdc)
DS GS
Gate--SourceLeakageCurrent I 1 Adc
GSS
(V =1.5Vdc,V =0Vdc)
GS DS
(4)
Stage1 -- OnCharacteristics
GateThresholdVoltage V 1.2 2.0 2.7 Vdc
GS(th)
(V =10Vdc,I =23 Adc)
DS D
GateQuiescentVoltage V 2.7 Vdc
GS(Q)
(V =28Vdc,I =80mAdc)
DS DQ1(A+B)
FixtureGateQuiescentVoltage V 6.0 7.0 8.0 Vdc
GG(Q)
(V =28Vdc,I =80mAdc,MeasuredinFunctionalTest)
DD DQ1(A+B)
1. Continuous useatmaximum temperaturewillaffectMTTF.
2. MTTFcalculatoravailableat