Product Information

BUK6610-75C

BUK6610-75C electronic component of NXP

Datasheet
Trans MOSFET N-CH 75V 75A Automotive 3-Pin(2+Tab) D2PAK
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 3.5417 ea
Line Total: USD 35.42

0 - Global Stock
MOQ: 10  Multiples: 1
Pack Size: 1

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Mounting Style
Channel Mode
Id Continuous Drain Current
Pd Power Dissipation
Gate Source Voltage Max
Operating Temp Range
Package Type
Pin Count
Type
Number Of Elements
Operating Temperature Classification
Drain Source On Volt
Rad Hardened
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Additional Infomation About Product

BUK6610-75C N-channel TrenchMOS FET Rev. 02 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Suitable for thermally demanding environments due to 175 C rating Suitable for intermediate level gate drive sources 1.3 Applications 12 V Automotive systems Start-Stop micro-hybrid applications Electric and electro-hydraulic power Transmission control steering Ultra high performance power EngineMotors, lamps and solenoid switching control management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --75 V DS j j I drain current V =10V T =25C --78 A D GS mb see Figure 1 P total power dissipation T = 25 C see Figure 2 --158W tot mb Static characteristics R drain-source on-state V =10V I =25A -8.6 10 m DSon GS D resistance T =25C see Figure 11 jBUK6610-75C NXP Semiconductors N-channel TrenchMOS FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =78A V 75 V --121mJ DS(AL)S D sup drain-source avalanche R =50 V =10V GS GS energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge I =25A V =60V -30 - nC GD D DS V = 10 V see Figure 13 GS see Figure 14 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D mb 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK6610-75C D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) BUK6610-75C All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 14 October 2010 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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