X-On Electronics has gained recognition as a prominent supplier of BUK6218-40C,118 mosfet across the USA, India, Europe, Australia, and various other global locations. BUK6218-40C,118 mosfet are a product manufactured by NXP. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

BUK6218-40C,118 NXP

BUK6218-40C,118 electronic component of NXP
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See Product Specifications
Part No.BUK6218-40C,118
Manufacturer: NXP
Category:MOSFET
Description: MOSFET N-CHAN 40V 42A
Datasheet: BUK6218-40C,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 2500
Multiples : 2500
2500 : USD 0.3741
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 1.0667
10 : USD 0.9299
100 : USD 0.7176
500 : USD 0.5315
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1
1 : USD 0.7651
10 : USD 0.6292
100 : USD 0.4054
1000 : USD 0.3407
2500 : USD 0.3134
10000 : USD 0.3134
25000 : USD 0.3009
50000 : USD 0.2972
100000 : USD 0.2897
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Transistor Type
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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BUK6218-40C N-channel TrenchMOS intermediate level FET Rev. 1 4 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for thermally demanding environments due to 175 C rating Suitable for standard and logic level gate drive sources 1.3 Applications 12 V Automotive systems Start-Stop micro-hybrid applications Electric and electro-hydraulic power Transmission control steering Ultra high performance power Motors, lamps and solenoids switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --40 V DS j j voltage I drain current V =10V T =25C --42 A D GS mb see Figure 1 P total power see Figure 2 --60 W tot dissipation Static characteristics R drain-source V =10V I =10A -13.516 m DSon GS D on-state T = 25 C see Figure 11 mb resistanceBUK6218-40C Nexperia N-channel TrenchMOS intermediate level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =42A V 40 V --25 mJ DS(AL)S D sup drain-source V =10V T =25C GS j(init) avalanche energy unclamped Dynamic characteristics Q gate-drain charge I =25A V =32V -7.7 -nC GD D DS V = 10 V see Figure 13 GS see Figure 14 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 1 3 SOT428 (DPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK6218-40C DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) BUK6218-40C All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 4 October 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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