Product Information

BFR505/T1

BFR505/T1 electronic component of NXP

Datasheet
BFR505/T1 WIDEBAND TRANSISTOR SOT416

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2772 ea
Line Total: USD 0.28

2619 - Global Stock
Ships to you by
Mon. 29 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2619 - Global Stock


Ships to you by Mon. 29 Apr

MOQ : 1
Multiples : 1
1 : USD 0.2772
10 : USD 0.1386
25 : USD 0.1247
100 : USD 0.104
500 : USD 0.0936

     
Manufacturer
Product Category
Transistor Type
Technology
Transistor Polarity
Operating Frequency
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
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BFR505 NPN 9 GHz wideband transistor Rev. 4 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR505 is an NPN silicon planar epitaxial transistor, intended for applications in the RF front end in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV). The transistor is encapsulated in a plastic SOT23 envelope. 1.2 Features and benefits High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. 1.3 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-base open emitter - - 20 V CBO voltage V collector-emitter R = 0 -- 15 V CES BE voltage DC collector -- 18 mA I C current 1 P total power up to T = 135 C -- 150mW tot s dissipation h DC current gain I = 5 mA V = 6 V 60 120 250 FE C CE C feedback I = i = 0 A V = 6 V f = 1 MHz - 0.3 - pF re C c CB capacitance transition frequency I = 5 mA V = 6 V f = 1 GHz - 9 - GHz f T C CE maximum unilateral I = 5 mA V = 6 V -17 -dB G UM C CE power gain T = 25 C f = 900 MHz amb I = 5 mA V = 6 V -10 -dB C CE T = 25 C f = 2 GHz amb 2 S insertion power I = 5 mA V = 6 V 13 14 - dB 21 C CE gain T = 25 C f = 900 MHz amb SOT23BFR505 NXP Semiconductors NPN 9 GHz wideband transistor Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit F noise figure = I = 1.25 mA V = 6 V -1.2 1.7 dB s opt C CE T = 25 C f = 900 MHz amb = I = 5 mA V = 6 V -1.6 2.1 dB s opt C CE T = 25 C f = 900 MHz amb = I = 1.25 mA V = 6 V -1.9 -dB s opt C CE T = 25 C f = 2 GHz amb 1 T is the temperature at the soldering point of the collector tab. s 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Symbol 1base 3 3 2emitter 3 collector 1 12 2 sym021 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFR505 - plastic surface mounted package 3 leads SOT23 4. Marking Table 4. Marking table 1 Type number Marking code BFR505 31* 1 * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. BFR505 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 4 7 September 2011 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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