X-On Electronics has gained recognition as a prominent supplier of NTE460 mosfet across the USA, India, Europe, Australia, and various other global locations. NTE460 mosfet are a product manufactured by NTE. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

NTE460 NTE

NTE460 electronic component of NTE
Images are for reference only
See Product Specifications
Part No.NTE460
Manufacturer: NTE
Category:MOSFET
Description: Transistor: P-JFET; 20V; TO72
Datasheet: NTE460 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 8.6473 ea
Line Total: USD 86.47

Availability - 0
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 10
Multiples : 1
10 : USD 8.6473
50 : USD 5.5714
100 : USD 5.1369
200 : USD 4.7691
500 : USD 4.4571

0 - WHS 2


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 14
Multiples : 1
14 : USD 5.1327

0 - WHS 3


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 9.996
3 : USD 6.538
7 : USD 6.188

0 - WHS 4


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 14
Multiples : 14
14 : USD 5.1327

     
Manufacturer
Product Category
Mounting
Case
Kind Of Channel
Type Of Transistor
Drain-Source Voltage
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We are delighted to provide the NTE460 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE460 and other electronic components in the MOSFET category and beyond.

NTE460 Silicon PChannel JFET Transistor AF Amp TO72 Type Package Absolute Maximum Ratings: DrainGate Voltage, V ............................................................ 20V DG Reverse Gate Source Voltage, V ................................................. 20V GSR Gate Current, I .................................................................. 10mA G Total Device Dissipation (T = +25 C), P ............................................ 0.3W A D Derate above 25 C ..................................................... 1.7mW/ C Storage Temperature Range, T .......................................... 65 to +200 C stg Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics GateSource Breakdown Voltage V I = 10 A, V = 0 20 V (BR)GSS G DS Gate Reverse Current I V = 10V, V = 0 10 nA GSS GS DS V = 10V, V = 0, T = +150 C 10 A GS DS A ON Characteristics ZeroGateVoltage Drain Current I V = 10V, V = 0, Note 1 2.0 6.0 mA DSS DS GS GateSource Voltage V V = 15V, I = 10 A 6.0 V GS DG D DrainSource Resistance r I = 100 A, V = 0 800 DS D GS SmallSignal Characteristics Forward Transfer Admittance y V = 10V, I = 2mA, f = 1kHz, Note 1 1500 3000 mhos fs DS D V = 10V, I = 2mA, f = 10MHz, Note 1 1350 mhos DS D Output Admittance y V = 10V, I = 2mA, f = 1kHz 40 mhos os DS D Reverse Transfer Conductance y V = 10V, I = 2mA, f = 1kHz 0.1 mhos rs DS D Input Conductance y V = 10V, I = 2mA, f = 1kHz 0.2 mhos is DS D Inpu Capacitance C V = 10V, V = 1V, f = 1MHz 20 pF iss DS GS Functional Characteristics Noise Figure NF V = 5V, I = 1mA, R = 1M , f = 1kHz 3.0 dB DS D g Note 1. Pulse Test: PulseWidth 630ms, Duty Cycle 10%. Rev. 1013D G S .220 (5.58) Dia .185 (4.7) Dia .190 (4.82) .030 (.762) .500 (12.7) Min .018 (0.45) Dia Gate Source Drain 45 Case .040 (1.02)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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