X-On Electronics has gained recognition as a prominent supplier of NTE252 darlington transistors across the USA, India, Europe, Australia, and various other global locations. NTE252 darlington transistors are a product manufactured by NTE. We provide cost-effective solutions for darlington transistors, ensuring timely deliveries around the world.

NTE252 NTE

NTE252 electronic component of NTE
Images are for reference only
See Product Specifications
Part No.NTE252
Manufacturer: NTE
Category:Darlington Transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 20A; 160W; TO3
Datasheet: NTE252 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 25.3878 ea
Line Total: USD 25.39

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 25.3878
11 : USD 23.9675
50 : USD 9.181
100 : USD 8.4738
200 : USD 7.8582
500 : USD 7.3343

0 - WHS 2


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 14
2 : USD 9.17
3 : USD 9.156
5 : USD 8.666

     
Manufacturer
Product Category
Polarisation
Case
Mounting
Kind Of Transistor
Kind Of Package
Type Of Transistor
Collector Current
Collector-Emitter Voltage
Power Dissipation
Current Gain
Frequency
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We are delighted to provide the NTE252 from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE252 and other electronic components in the Darlington Transistors category and beyond.

NTE251 (NPN) & NTE252 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for generalpurpose amplifier and lowfrequency switching applications. Features: High DC Current Gain I = 10A: C h = 2400 Typ (NTE251) FE h = 4000 Typ (NTE252) FE CollectorEmitter Sustaining Voltage: V = 100V Min CEO(sus) Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CB EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EB Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA B Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.915W/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.09C/W thJCElectrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter SustainingVoltage V I = 100mA, I = 0 100 V CEO(sus) C B Collector Cutoff Current I V = 50V, I = 0 1.0 mA CEO CE E I V = 100V, V = 1.5V 0.5 mA CEX CE BE(off) V = 100V, V = 1.5V, 5.0 mA CE BE(off) T = +150C A Emitter Cutoff Current I V = 5V, I = 0 2.0 mA EBO BE C ON Characteristics (Note 1) DC Current Gain h V = 3V, I = 10A 750 18000 FE CE C V = 3V, I = 20A 100 CE C CollectorEmitter Saturation Voltage V I = 10A, I = 40mA 2.0 V CE(sat) C B I = 20A, I = 200mA 3.0 V C B BaseEmitter Saturation Voltage V I = 20A, I = 200mA 4.0 V BE(sat) C B BaseEmitter ON Voltage V V = 3V, I = 10A 2.8 V BE(on) CE C Dynamic Characteristics SmallSignal Current Gain h V = 3V, I = 10A, f = 1kHz 300 fe CE C Magnitude of Common Emitter h V = 3V, I = 10A, f = 1MHz 4.0 MHz fe CE C SmallSignal ShortCircuit Forward Current Transfer Ratio Output Capacitance C V = 10V, I = 0, f = 0.1MHz pF ob CB E NTE251 400 NTE252 600 Note 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2% Schematic Diagram C C B B E E NPN PNP

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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