NTE16004 (PNP) & NTE16005 (NPN) Silicon Complementary Transistors High Current, General Purpose Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A C Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A B Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.057mW/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17.5C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 100mA, I = 0 75 V (BR)CEO) C B Collector Cutoff Current I V = 100V, V = 1.5V 0.1 mA CEX CE BE V = 70V, V = 1.5V, T = +150C 5.0 mA CE BE C Emitter Cutoff Current I V = 7V, I = 0 0.1 mA EBO BE C ON Characteristics (Note 1) DC Current Gain h I = 500mA, V = 4V 30 130 FE C CE I = 1A, V = 2V 10 C CE CollectorEmitter Saturation Voltage V CE(sat) NTE16004 I = 500mA, I = 50mA 0.7 V C B NTE16005 0.5 V BaseEmitter ON Voltage V I = 500mA, V = 4V 1.1 V BE(on) C CE SmallSignal Characteristics SmallSignal Current Gain h I = 50mA, V = 4V, f = 10MHz 5 fe C CE Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Switching Characteristics TurnOn Time t on NTE16004 V = 30V, I = 500mA, I = 50mA 100 ns CC C B1 NTE16005 80 ns TurnOff Time t off NTE16004 1000 ns V = 30V, I = 500mA, CC C I = I = 50mA B1 B2 NTE16005 800 ns .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45 .031 (.793)