RB521CS30L

RB521CS30L 100 mA low V MEGA Schottky barrier rectifier F Rev. 1 24 January 2011 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD882 leadless ultra small Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits Average forward current: I 100 mA F(AV) Reverse voltage: V 30 V R Low forward voltage: V 350 mV F Low reverse current: I 10 A R AEC-Q101 qualified Leadless ultra small SMD plastic package 1.3 Applications Low voltage rectification High efficiency DC-to-DC conversion Switch Mode Power Supply (SMPS) Reverse polarity protection Low power consumption applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I average forward current square wave F(AV) = 0.5 f = 20 kHz 1 T 135 C - - 100 mA amb T 145 C - - 100 mA sp I reverse current V =10V - 2 10 A R R V reverse voltage - - 30 V R 2 V forward voltage I =10mA - 280 350 mV F F 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 cathode 1 cm . 2 Pulse test: t 300 s 0.02. pRB521CS30L NXP Semiconductors 100 mA low V MEGA Schottky barrier rectifier F 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 1 cathode 12 2 anode 1 2 sym001 Transparent top view 1 The marking bar indicates the cathode. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version RB521CS30L - leadless ultra small plastic package 2 terminal SOD882 body 1.0 0.6 0.5 mm 4. Marking Table 4. Marking codes Type number Marking code RB521CS30L AR 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse voltage - 30 V R I average forward current square wave = 0.5 F(AV) f = 20 kHz 1 T 135 C -100 mA amb T 145 C-100mA sp 2 I non-repetitive peak forward half sine wave -3 A FSM current t 8.3 ms p RB521CS30L All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 24 January 2011 2 of 13