X-On Electronics has gained recognition as a prominent supplier of PSMN3R5-80PS,127 mosfet across the USA, India, Europe, Australia, and various other global locations. PSMN3R5-80PS,127 mosfet are a product manufactured by Nexperia. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

PSMN3R5-80PS,127

PSMN3R5-80PS,127 electronic component of Nexperia
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See Product Specifications
Part No.PSMN3R5-80PS,127
Manufacturer: Nexperia
Category:MOSFET
Description: MOSFET N-Ch 80V 3.5 mOhms
Datasheet: PSMN3R5-80PS,127 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.2951 ea
Line Total: USD 4.3

Availability - 3615
Ships to you between
Wed. 05 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
565 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 6.0109
10 : USD 4.1236
100 : USD 3.4645
500 : USD 3.1606
1000 : USD 2.7869

3595 - WHS 2


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 4.163
10 : USD 2.8635
100 : USD 2.599
500 : USD 2.507
1000 : USD 2.2885
5000 : USD 2.2885

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Brand
Factory Pack Quantity :
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PSMN3R5-80PS N-channel 80 V, 3.5 m standard level MOSFET in TO-220 Rev. 03 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO-220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses 1.3 Applications DC-to-DC converters Motor control Load switch Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 80 V DS j j 1 I drain current T =25C V =10V --120A D mb GS see Figure 1 total power dissipation T = 25 C see Figure 2 --338W P tot mb junction temperature -55 - 175 C T j Static characteristics drain-source on-state V =10V I =25A -5 5.8 m R DSon GS D resistance T =100 C see Figure 12 j 2 V =10V I =25A -3 3.5 m GS D T = 25 C see Figure 13 j Dynamic characteristics Q gate-drain charge V =10V I =75A -27 -nC GD GS D V = 40 V see Figure 14 DS Q total gate charge - 139 - nC G(tot) see Figure 15 Avalanche ruggedness E non-repetitive drain-source V =10V T =25C --676mJ DS(AL)S GS j(init) avalanche energy I = 120 A V 80 V D sup R =50 unclamped GSPSMN3R5-80PS Nexperia N-channel 80 V, 3.5 m standard level MOSFET in TO-220 1 Continuous current is limited by package. 2 Measured 3 mm from package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D mb 2 D drain 3S source G mb D drain mbb076 S 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN3R5-80PS TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB PSMN3R5-80PS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 03 19 April 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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