X-On Electronics has gained recognition as a prominent supplier of PSMN1R5-30YL,115 mosfet across the USA, India, Europe, Australia, and various other global locations. PSMN1R5-30YL,115 mosfet are a product manufactured by Nexperia. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

PSMN1R5-30YL,115

PSMN1R5-30YL,115 electronic component of Nexperia
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See Product Specifications
Part No.PSMN1R5-30YL,115
Manufacturer: Nexperia
Category:MOSFET
Description: MOSFET N-CHAN 30V 100A
Datasheet: PSMN1R5-30YL,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.6849 ea
Line Total: USD 1.68

Availability - 1839
Ships to you between
Thu. 06 Jun to Mon. 10 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1820 - WHS 1


Ships to you between Thu. 06 Jun to Mon. 10 Jun

MOQ : 1
Multiples : 1
1 : USD 1.5525
10 : USD 1.242
100 : USD 1.0051
500 : USD 0.874
1500 : USD 0.644
3000 : USD 0.644

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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PSMN1R5-30YL N-channel 30 V 1.5 m logic level MOSFET in LFPAK Rev. 01 9 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low Improved mechanical and thermal RDSon and low gate charge characteristics High efficiency gains in switching LFPAK provides maximum power power convertors density in a Power SO8 package 1.3 Applications DC-to-DC converters Motor control Lithium-ion battery protection Server power supplies Load switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --30 V DS j j voltage 1 I drain current T =25C V = 10 V see --100A D mb GS Figure 1 P total power T = 25 C see Figure 2 --109W tot mb dissipation T junction -55 - 175 C j temperature Static characteristics R drain-source V =10V I =15A --2.4 m DSon GS D on-state T = 100 C see Figure 14 j resistance V =10V I =15A -1.3 1.5 m GS D T =25C j Dynamic characteristics Q gate-drain charge V =4.5 V I =10A -8.7 -nC GD GS D V =12 V see Figure 15 see DS Figure 16PSMN1R5-30YL Nexperia N-channel 30 V 1.5 m logic level MOSFET in LFPAK Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Q total gate charge V =4.5 V I =10A -36.2-nC G(tot) GS D V =12 V see Figure 15 DS Avalanche ruggedness E non-repetitive V =10V T =25C --241mJ DS(AL)S GS j(init) drain-source I =100 A V 30 V D sup avalanche energy R =50 unclamped GS 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN1R5-30YL LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 PSMN1R5-30YL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 9 April 2010 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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