PMV30UN2R Nexperia

PMV30UN2 20 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipation capability of 1000 mW 3. Applications LED driver Power management Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 20 V DS j V gate-source voltage -12 - 12 V GS I drain current V = 4.5 V T = 25 C t 5 s 1 - - 5.4 A D GS amb Static characteristics R drain-source on-state V = 4.5 V I = 4.2 A T = 25 C - 24 32 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm .Nexperia PMV30UN2 20 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 3 2 S source G 3 D drain 1 2 S TO-236AB (SOT23) 017aaa253 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMV30UN2 TO-236AB plastic surface-mounted package 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code 1 PMV30UN2 %K6 1 % = placeholder for manufacturing site code PMV30UN2 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 24 April 2014 2 / 15