X-On Electronics has gained recognition as a prominent supplier of PMBT3904,235 bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. PMBT3904,235 bipolar transistors - bjt are a product manufactured by Nexperia. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

PMBT3904,235

PMBT3904,235 electronic component of Nexperia
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See Product Specifications
Part No.PMBT3904,235
Manufacturer: Nexperia
Category:Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 40 V 200 mA 300MHz 250 mW Surface Mount TO-236AB
Datasheet: PMBT3904,235 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.1162 ea
Line Total: USD 0.12

Availability - 66198
Ships to you between
Thu. 06 Jun to Mon. 10 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
66198 - WHS 1


Ships to you between Thu. 06 Jun to Mon. 10 Jun

MOQ : 1
Multiples : 1
1 : USD 0.1162
10 : USD 0.0794
100 : USD 0.0356
1000 : USD 0.0207
10000 : USD 0.0161
20000 : USD 0.0127
50000 : USD 0.0103
100000 : USD 0.0092

77600 - WHS 2


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 10000
Multiples : 10000
10000 : USD 0.0097
30000 : USD 0.0097
50000 : USD 0.0097
150000 : USD 0.0097
250000 : USD 0.0097

77600 - WHS 3


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 10000
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20000 : USD 0.0134
100000 : USD 0.0133

52704 - WHS 4


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37345 - WHS 5


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194000 - WHS 6


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1000 : USD 0.0246
2500 : USD 0.0217
10000 : USD 0.0164
20000 : USD 0.0123
100000 : USD 0.0122

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We proudly offer the PMBT3904,235 Bipolar Transistors - BJT at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the PMBT3904,235 Bipolar Transistors - BJT.

PMBT3904 40 V, 200 mA NPN switching transistor 5 November 2020 Product data sheet 1. General description NPN switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PMBT3906 2. Features and benefits Collector current capability I = 200 mA C Collector-emitter voltage V = 40 V CEO 3. Applications General switching and amplification 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 40 V CEO voltage I collector current - - 200 mA C h DC current gain V = 1 V I = 10 mA 1 100 - 300 FE CE C 1 Pulsed test: t 300 s 0.02 p 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 3 C 2 E emitter B 3 C collector E sym021 1 2 SOT23Nexperia PMBT3904 40 V, 200 mA NPN switching transistor 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMBT3904 SOT23 plastic, surface-mounted package 3 terminals 1.9 mm pitch 2.9 SOT23 mm x 1.3 mm x 1 mm body 7. Marking Table 4. Marking codes Type number Marking code 1 %1A PMBT3904 1 % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 60 V CBO V collector-emitter voltage open base - 40 V CEO V emitter-base voltage open collector - 6 V EBO I collector current - 200 mA C I peak collector current single pulse t 1 ms - 200 mA CM p I peak base current - 100 mA BM P total power dissipation T 25 C 1 - 250 mW tot amb T junction temperature - 150 C j T ambient temperature -65 150 C amb T storage temperature -65 150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from 1 - - 500 K/W th(j-a) junction to ambient 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. PMBT3904 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 5 November 2020 2 / 11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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