BC857C,235

BC856 BC857 BC858 65 V, 100 mA PNP general-purpose transistors Rev. 7 16 April 2018 Product data sheet 1 Product profile 1.1 General description PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1.Product overview Type number Package NPN complement Nexperia JEDEC BC856 SOT23 TO-236AB BC846 BC856A BC846A BC856B BC846B BC857 BC847 BC857A BC847A BC857B BC847B BC857C BC847C BC858B BC848B 1.2 Features and benefits Low current (max. 100 mA) Low voltage (max. 65 V) AEC-Q101 qualified 1.3 Applications General-purpose switching and amplificationNexperia BC856 BC857 BC858 65 V, 100 mA PNP general-purpose transistors 1.4 Quick reference data Table 2.Quick reference data T = 25 C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base CEO BC856 - - -65 V BC857 - - -45 V BC858B - - -30 V I collector current - - -100 mA C I peak collector current - - -200 mA CM h DC current gain V = -5 V I = -2 mA FE CE C BC856 125 - 475 - BC857 125 - 800 - BC856A BC857A 125 - 250 - BC856 BC857B BC858B 220 - 475 - BC857C 420 - 800 - 2 Pinning information Table 3.Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 3 C 2 E emitter 3 C collector B E sym132 1 2 BC856 BC857 BC858 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2018. All rights reserved. Product data sheet Rev. 7 16 April 2018 2 / 14