X-On Electronics has gained recognition as a prominent supplier of MT48H32M16LFB4-6 AT:C TR dram across the USA, India, Europe, Australia, and various other global locations. MT48H32M16LFB4-6 AT:C TR dram are a product manufactured by Micron. We provide cost-effective solutions for dram, ensuring timely deliveries around the world.

MT48H32M16LFB4-6 AT:C TR

MT48H32M16LFB4-6 AT:C TR electronic component of Micron
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Part No.MT48H32M16LFB4-6 AT:C TR
Manufacturer: Micron
Category:DRAM
Description: DRAM MOBILE SDRAM 512M 32MX16 FBGA
Datasheet: MT48H32M16LFB4-6 AT:C TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1000
Multiples : 1000
1000 : USD 10.987
10000 : USD 10.8051
1000000 : USD 9.1845
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 10.6595
10 : USD 9.7791
25 : USD 9.488
50 : USD 9.488
100 : USD 8.9525
250 : USD 8.5101
500 : USD 8.254
1000 : USD 8.254
2000 : USD 8.0794
N/A

Obsolete
     
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Supply Voltage - Max
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We proudly offer the MT48H32M16LFB4-6 AT:C TR DRAM at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the MT48H32M16LFB4-6 AT:C TR DRAM.

512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile LPSDR SDRAM MT48H32M16LF 8 Meg x 16 x 4 Banks MT48H16M32LF/LG 4 Meg x 32 x 4 Banks Options Marking Features V /V : 1.8V/1.8V H DD DDQ V /V = 1.71.95V DD DDQ Addressing Fully synchronous all signals registered on positive Standard addressing option LF 1 edge of system clock Reduced page size option LG Internal, pipelined operation column address can Configuration be changed every clock cycle 32 Meg x 16 (8 Meg x 16 x 4 32M16 banks) Four internal banks for concurrent operation 16 Meg x 32 (4 Meg x 32 x 4 16M32 Programmable burst lengths: 1, 2, 4, 8, and continu- banks) ous Plastic green packages Auto precharge, includes concurrent auto precharge 2 54-ball VFBGA (8mm x 8mm) B4 Auto refresh and self refresh modes 3 90-ball VFBGA (8mm x 13mm) B5 LVTTL-compatible inputs and outputs Timing cycle time On-chip temperature sensor to control self refresh 6ns at CL = 3 -6 rate 7.5ns at CL = 3 -75 Power Partial-array self refresh (PASR) Standard I /I None DD2 DD7 Deep power-down (DPD) 1 Low-power I /I L DD2 DD7 Selectable output drive strength (DS) Operating temperature range 64ms refresh period 32ms for automotive tempera- Commercial (0C to +70C) None ture Industrial (40C to +85C) IT Automotive (40C to +105C) AT Revision :C 1. Contact factory for availability. Notes: 2. Available only for x16 configuration. 3. Available only for x32 configuration. Table 1: Configuration Addressing 16 Meg x 32 Reduced 1 Architecture 32 Meg x 16 16 Meg x 32 Page Size Option Number of banks 4 4 4 Bank address balls BA0, BA1 BA0, BA1 BA0, BA1 Row address balls A 12:0 A 12:0 A 13:0 Column address balls A 9:0 A 8:0 A 7:0 1. Contact factory for availability. Note: PDF: 09005aef8459c827 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 512mb mobile sdram y67m at.pdf Rev. C 10/2018 EN 2011 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Table 2: Key Timing Parameters Clock Rate (MHz) Access Time Speed Grade CL = 2 CL = 3 CL = 2 CL = 3 -6 104 166 8ns 5ns -75 104 133 8ns 5.4ns Note: 1. CL = CAS (READ) latency. Figure 1: 512Mb Mobile LPSDR Part Numbering MT 48 H 32M16 LF B4 -75 IT :C Design Revision Micron Technology :C = Device generation Product Family Operating Temperature 48 = Mobile LPSDR SDRAM Blank = Commercial (0C to +70C) IT = Industrial (40C to +85C) Operating Voltage AT = Automotive (40C to +105C) H = 1.8V/1.8V Low Power Configuration Blank = Standard I /I 32M16 = 32 Meg x 16 DD2 DD7 L = Low-power I /I 16M32 = 16 Meg x 32 DD2 DD7 Cycle Time Addressing t -6 = 6ns, CK CL = 3 LF = Standard addressing t -75 = 7.5ns, CK CL = 3 LG = Reduced page size Package Codes B4 = 8mm x 8mm, VFBGA, green B5 = 8mm x 13mm, VFBGA, green FBGA Part Marking Decoder Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the part number. Microns FBGA part marking decoder is available at www.micron.com/decoder. PDF: 09005aef8459c827 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 512mb mobile sdram y67m at.pdf Rev. C 10/2018 EN 2011 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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