DTC144EE FeaturesFeaturesFeatures Built-In Bias Resistors Enable the Configuration of an Inverter Circuit Without Connecting External Input Resistors The Bias Resistors Consist of Thin-Film Resistors With Complete NPN Isolation to Allow Negative Biasing of the Input. They Also Have Digital Transistor the Advantage of Almost Completely Eliminating Parasitic Effects Only the On/Off Conditions Need to Be Set For Operation, Making Device Design Easy Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant Suffix Designates RoHS SOT-523 Compliant.See Ordering Information) Maximum Ratings 25C Unless Otherwise Specified A D 3 1:IN Parameter Symbol Min Typ Max Unit 2:GND C B 3:OUT --- Supply Voltage V --- 50 V CC 1 2 Input Voltage V -10 --- 40 V F E IN Output Current I --- --- 100 mA H o J G Peak Collector Current I --- --- 100 mA K CM Power Dissipation P --- 150 --- mW D DIMENSIONS Junction Temperature T --- --- 150 J INCHES MM DIM NOTE MIN MAX MIN MAX Storage Temperature T -55 --- 150 stg A 0.059 0.067 1.50 1.70 B 0.030 0.033 0.75 0.85 Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, C 0.057 0.069 1.45 1.75 <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 0.020 0.50 0.50 D E 0.035 0.043 0.90 1.10 G 0.000 0.004 0.00 0.10 H 0.024 0.031 0.60 0.80 Device Marking26 J 0.004 0.008 0.10 0.20 K 0.006 0.014 0.15 0.35 Internal Structure OUT Suggested Solder Pad Layout 3 R1 IN (mm) 1 R2 2 GND(+) IN OUT GND(+) Rev.3-4-12142020 1/4 MCCSEMI.COMDTC144EE Electrical Characteristics 25C Unless Otherwise Specified Parameter Symbol Min Typ Max Unit Conditions V =5V, I =100A V 0.5 --- --- V CC O I(off) Input Voltage V V =0.3V, I =2mA --- --- 3.0 V I(on) O O I =10mA,I =0.5mA V Output Voltage --- --- 0.3 V O I O(on) I V =5V Input Current --- --- 0.18 mA I I I V =50V, V =0 Output Current --- --- 0.5 A O(off) CC I V =5V, I =5mA DC Current Gain G 68 --- --- O O I R Input Resistance 32.9 47 61.1 K 1 R /R Resistance Ratio 0.8 1.0 1.2 2 1 V =10V, I =-5mA, f=100MHz Transition Frequency f --- 250 --- MHz CE E T Rev.3-4-12142020 2/4 MCCSEMI.COM