2.4 GHz High-Efficiency, High-Gain Power Amplifier Module SST12LP17E Data Sheet SST12LP17E is a 2.4 GHz high-efficiency, fully-matched power amplifier module based on the highly-reliable InGaP/GaAs HBT technology. It is designed in compli- ance with IEEE 802.11b/g/n applications and typically provides 28 dB gain with 28% power-added efficiency at 21dBm. SST12LP17E has excellent linearity, providing 3% EVM at typically 18 dBm, while meeting 802.11g spectrum mask at 21.5 dBm. This power amplifier requires no external RF matching, and only requires one exter- nal DC-bias capacitor to meet the specified performance. It offers high-speed power-up/-down control through a single reference voltage pin and includes a tem- perature-stable, VSWR insensitive power detector voltage output. SST12LP17E is offered in a super-thin (0.4mm maximum) 8-contact X2SON package and a 8-con- tact USON package. Features Input/Output ports internally matched to 50 and Low shut-down current (~2 A) DC decoupled Stable performance over temperature High gain: ~2 dB gain variation between -40C to +85C ~1 dB power variation between -40C to +85C Typically 28 dB gain across 2.42.5 GHz Excellent on-chip power detection High linear output power: >15 dB dynamic range, dB-wise linear >24 dBm P1dB VSWR insensitive, temperature stable - Single-tone measurement. Please refer to Absolute Maximum Stress Ratings on page 5 Packages available Meets 802.11g OFDM ACPR requirement up to 21.5 dBm 8-contact X2SON 2mm x 2mm x 0.4mm 3% EVM up to 18 dBm for 54 Mbps 802.11g signal 8-contact USON 2mm x 2mm x 0.6mm 2.5% EVM up to 17 dBm for 802.11n, MCS7, 40 MHz Meets 802.11b ACPR requirement up to 22.5 dBm Non-Pb (lead-free), RoHS compliant, and Halogen free Meets Bluetooth spectrum mask for 3 Mbps at 17 dBm typical High power-added efficiency/Low operating cur- Applications rent for 802.11b/g/n applications ~28%/138 mA P = 21.5 dBm for 802.11g OUT WLAN (IEEE 802.11b/g/n) ~33%/155 mA P = 22.5 dBm for 802.11b OUT Bluetooth Single-pin low I power-up/down control REF I <2 mA REF Cordless phones Low idle current 2.4 GHz ISM wireless equipment ~60 mA I CQ High-speed power-up/down Turn on/off time (10%- 90%) <100 ns Typical power-up/down delay with driver delay included <200 ns 2014 Silicon Storage Technology, Inc. www.microchip.com DS-70005004G 10/142.4 GHz High-Efficiency, High-Gain Power Amplifier Module SST12LP17E Data Sheet Product Description The SST12LP17E is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT tech- nology.The input/output RF ports are fully matched to 50internally. These RF ports are DC decoupled and require no DC-blocking capacitors or matching components. This helps reduce the system boards Bill of Materi- als (BOM) cost. SST12LP17E is a 2.4 GHz fully-integrated, high-efficiency Power Amplifier module designed in compli- ance with IEEE 802.11b/g/n applications. It typically provides 28 dB gain with 28% power-added effi- ciency (PAE) POUT = 21.5 dBm for 802.11g and 33% PAE POUT = 22.5 dBm for 802.11b. This power amplifier has excellent linearity, typically 3% added EVM at 18 dBm output power which is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 21.5 dBm and 802.11b spectrum mask at 22.5 dBm. Using MCS7 modulation, with 40 MHz bandwidth, the SST12LP17E provides 17 dBm at 2.5% EVM. The device also features easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin. Ultra-low reference current (total I ~2 mA) makes the SST12LP17E control- REF lable by an on/off switching signal directly from the baseband chip. These features, coupled with low operating current, make the SST12LP17E ideal for the final stage power amplification in battery-powered 802.11b/g/n WLAN transmitter and Bluetooth applications. The SST12LP17E has an excellent on-chip, single-ended power detector, which features wide dynamic-range, >15 dB, with dB-wise linear performance. The excellent on-chip power detector provides a reliable solution to board-level power control. The SST12LP17E is offered in both 8-contact X2SON and 8-contact USON packages. See Figure 2 for pin assignments and Table 1 for pin descriptions. 2014 Silicon Storage Technology, Inc. DS-70005004G 10/14 2