TYPICAL PERFORMANCE CURVES APT15GP60BDQ1 APT15GP60BDQ1 600V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz operation 400V, 19A C Low Gate Charge 200 kHz operation 400V, 12A G Ultrafast Tail Current shutoff SSOA rated E MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Parameter UNIT Symbol APT15GP60BDQ1 V Collector-Emitter Voltage 600 CES Volts V Gate-Emitter Voltage 20 GE I Continuous Collector Current T = 25C 56 C1 C I Continuous Collector Current T = 110C Amps 27 C2 C 1 I Pulsed Collector Current T = 150C 65 CM C SSOA Switching Safe Operating Area T = 150C J 65A 600V P Watts Total Power Dissipation 250 D Operating and Storage Junction Temperature Range T ,T -55 to 150 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. L 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT V Collector-Emitter Breakdown Voltage (V = 0V, I = 500A) 600 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 1mA, T = 25C) 3 4.5 6 GE(TH) CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 15A, T = 25C) 2.2 2.7 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 15A, T = 125C) 2.1 GE C j 2 Collector Cut-off Current (V = 600V, V = 0V, T = 25C) 275 CE GE j A I CES 2 Collector Cut-off Current (V = 600V, V = 0V, T = 125C) 3000 CE GE j Gate-Emitter Leakage Current (V = 20V) I nA 100 GE GES CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - APT15GP60BDQ1 DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance 1685 Capacitance ies C Output Capacitance V = 0V, V = 25V 210 pF oes GE CE C f = 1 MHz Reverse Transfer Capacitance 15 res V Gate-to-Emitter Plateau Voltage 7.5 V GEP Gate Charge 3 Q V = 15V Total Gate Charge GE 55 g V = 300V Q nC Gate-Emitter Charge CE 12 ge I = 15A C Q Gate-Collector Mille) Charge gc 15 SSOA Switching Safe Operating Area T = 150C, R = 5, V = 65 A J G GE 15V, L = 100H,V = 600V CE t Turn-on Delay Time 8 Inductive Switching (25C) d(on) V = 400V CC t Current Rise Time 12 r ns V = 15V GE t Turn-off Delay Time 29 d(off) I = 15A C t 60 Current Fall Time f R = 5 G 4 E Turn-on Switching Energy 130 on1 T = +25C J 5 E Turn-on Switching Energy (Diode) 150 J on2 6 E Turn-off Switching Energy 120 off t Turn-on Delay Time Inductive Switching (125C) 8 d(on) V = 400V t CC Current Rise Time 12 r ns V = 15V GE t Turn-off Delay Time 70 d(off) I = 15A C t Current Fall Time 90 f R = 5 G 4 4 E Turn-on Switching Energy 130 on1 T = +125C J 55 Turn-on Switching Energy (Diode) E 265 on2 J 66 E Turn-off Switching Energy 270 off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case (IGBT) .50 JC C/W 1.35 R Junction to Case (DIODE) JC gm W Package Weight 5.90 T 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages ces 3 See MIL-STD-750 Method 3471. 4E is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. (See Figure 24.) 5E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. A Combi device is used for the clamping diode as shown in the E test circuit. (See Figures 21, 22.) on2 6E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off APT Reserves the right to change, without notice, the specifications and information contained herein. 050-7449 Rev B 10-2005