93LC76/86 93LC76/86 Not recommended for new designs Please use 93LC76C or 93LC86C. 93LC76/86 8K/16K 2.5V Microwire Serial EEPROM Features: Package Types Single supply with programming operation down PDIP Package to 2.5V Low-power CMOS technology - 1 mA active current typical 8 CS 1 VCC -5 A standby current (typical) at 3.0V 7 PE CLK 2 ORG pin selectable memory configuration 6 DI 3 ORG 1024 x 8 or 512 x 16 bit organization (93LC76) 5 4 DO VSS 2048 x 8 or 1024 x 16 bit organization (93LC86) Self-timed erase and write cycles (including auto-erase) SOIC Package Automatic ERAL before WRAL Power on/off data protection circuitry 8 1 Industry standard 3-wire serial I/O CS VCC 7 2 Device status signal during erase/write cycles CLK PE 6 ORG 3 Sequential read function DI 5 VSS DO 4 1,000,000 erase/write cycles ensured Data retention > 200 years 8-pin PDIP/SOIC package Temperature ranges available Block Diagram - Commercial (C) 0C to +70C - Industrial (I) -40C to +85C VCC VSS Description: Address Memory The Microchip Technology Inc. 93LC76/86 are 8K and Decoder Array 16K low voltage serial Electrically Erasable PROMs. The device memory is configured as x8 or x16 bits depending on the ORG pin setup. Advanced CMOS Address technology makes these devices ideal for low power Counter nonvolatile memory applications. These devices also have a Program Enable (PE) pin to allow the user to write-protect the entire contents of the memory array. Data Output The 93LC76/86 is available in standard 8-pin PDIP and DO Register Buffer 8-pin surface mount SOIC packages. DI Mode Decode PE Logic CS Clock CLK Generator 2004 Microchip Technology Inc. Preliminary DS21131E-page 193LC76/86 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................7.0V All inputs and outputs w.r.t. VSS ........................................................................................................-0.6V to Vcc + 1.0V Storage temperature ...............................................................................................................................-65C to +150C Ambient temperature with power applied................................................................................................-40C to +125C Soldering temperature of leads (10 seconds) .......................................................................................................+300C ESD protection on all pins..........................................................................................................................................4 kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. 1.1 AC Test Conditions AC Waveform: VLO = 2.0V VHI = Vcc - 0.2V (Note 1) VHI = 4.0V for (Note 2) Timing Measurement Reference Level Input 0.5 VCC Output 0.5 VCC Note 1: For VCC 4.0V 2: For VCC > 4.0V DS21131E-page 2 Preliminary 2004 Microchip Technology Inc.