MA4SW410B-1 HMIC Silicon SP4T PIN Diode Switch with Integrated Bias Network Rev. V4 Features Functional Diagrams Broad Bandwidth Specified up to 18 GHz Usable up to 26 GHz Integrated Bias Network Low Insertion Loss / High Isolation Fully Monolithic, Glass Encapsulated Chip RoHS* Compliant Description The MA4SW410B-1 device is a SP4T broadband switch with integrated bias network utilizing TM MACOM s HMIC (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC Yellow areas denote wire bond pads devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while gold backside J1 Common Port metallization allows for manual or automatic chip bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders or electrically conductive silver epoxy. DC Bias These high performance switches are suitable for use in multi-band ECM, Radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5 V / -5 V, TTL controlled PIN diode driver, 80 ns switching speeds can be achieved. J2 J5 J3 J4 Ordering Information Part Number Package MA4SW410B-1 Gel Pack *Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MA4SW410B-1 HMIC Silicon SP4T PIN Diode Switch with Integrated Bias Network Rev. V4 Electrical Specifications: T = +25C, 10 mA (On-Wafer Measurements) A Parameter Test Conditions Units Min. Typ. Max. 6 GHz 0.8 1.0 Insertion Loss 12 GHz dB 1.0 1.2 18 GHz 1.4 1.6 6 GHz 40 50 Isolation 12 GHz dB 35 40 18 GHz 30 35 6 GHz 10 Input Return Loss 12 GHz dB 15 18 GHz 10 1 Switching Speed 10 GHz ns 80 1. Typical switching speed is measured from (10% to 90% and 90% to 10% of detected RF voltage), driven by TTL compatible drivers. In the modulating state, (the switching port is modulating, all other ports are in steady state isolation.) The switching speed is measured using an RC network using the following values: R = 50 - 200 , C = 390 - 1000 pF. Driver spike current, I = C dv/dt, ratio of spike current to steady C state current, is typically 10:1. 2,3,4 Absolute Maximum Ratings Handling Procedures Parameter Absolute Maximum Please observe the following precautions to avoid RF CW Incident Power +33 dBm damage: Reverse Voltage -25 V Static Sensitivity Bias Current per Port 50 mA +25C These electronic devices are sensitive to electrostatic discharge (ESD) and can be damaged Junction Temperature +175C by static electricity. Proper ESD control techniques should be used when handling these Class 0 Operating Temperature -65C to +125C (HBM) and Class C1 (CDM).devices. Storage Temperature -65C to +150C 2. Exceeding any one or combination of these limits may cause permanent damage to this device. 3. MACOM does not recommend sustained operation near these survivability limits. 4. Maximum operating conditions for a combination of RF power, DC bias and temperature: +33 dBm CW 15 mA (per diode) +85C. 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: