Memory Module Speci cations KVR13LR9D4K4/64 64GB (16GB 2G x 72-Bit x 4 pcs.) PC3L-10600 CL9 Registered w/Parity 240-Pin DIMM Kit DESCRIPTION SPECIFICATIONS ValueRAM s KVR13LR9D4K4/64 is a kit of four 2G x 72-bit CL(IDD) 9 cycles (16GB) DDR3L-1333 CL9 SDRAM (Synchronous DRAM), Row Cycle Time (tRCmin) 49.5ns (min.) registered w/parity, low voltage, 2Rx4 ECC memory modules, Refresh to Active/Refresh 260ns (min.) based on thirty-six 1G x 4-bit FBGA components per module. Command Time (tRFCmin) Total kit capacity is 64GB. The SPDs are programmed to Row Active Time (tRASmin) 36ns (min.) JEDEC standard latency DDR3-1333 timing of 9-9-9 at 1.35V Maximum Operating Power (1.35V) = 5.526 W* and 1.5V. Each 240-pin DIMM uses gold contact fingers. The (1.50V) = 6.411 W* electrical and mechanical specifications are as follows: UL Rating 94 V - 0 o o C to 85 C Operating Temperature 0 o o Storage Temperature -55 C to +100 C FEATURES *Power will vary depending on the SDRAM and JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ Register/PLL used. 1.575V) Power Supply VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) 667MHz fCK for 1333Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 9, 8, 7, 6 Programmable Additive Latency: 0, CL - 2, or CL - 1 clock Programmable CAS Write Latency(CWL) = 7 (DDR3-1333) 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write either on the fly using A12 or MRS Bi-directional Differential Data Strobe Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm 1%) On Die Termination using ODT pin On-DIMM thermal sensor (Grade B) Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < TCASE < 95C Asynchronous Reset Continued >> PCB : Height 1.180 (30.00mm), double sided component Document No. VALUERAM1216-001.B00 01/22/13 Page 1MODULE DIMENSIONS: Document No. VALUERAM1216-001.B00 Page 2