Product Information

IS34MW01G084-BLI

IS34MW01G084-BLI electronic component of ISSI

Datasheet
NAND Flash 1 Gbit x8 4 bit ECC 63 Ball VFBGA 1.8V RoHS IT
Manufacturer: ISSI
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 7.9002 ea
Line Total: USD 7.9

212 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
212 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 4.715
10 : USD 4.278
100 : USD 3.7375
220 : USD 3.473
440 : USD 3.404
1100 : USD 3.335
2640 : USD 3.266
5060 : USD 3.1855
10120 : USD 3.1625

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Series
Memory Size
Interface Type
Organisation
Timing Type
Data Bus Width
Supply Voltage - Min
Supply Voltage - Max
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Moisture Sensitive
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif

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Additional Infomation About Product

IS34MW01G084/164 IS35MW01G084/164 1Gb SLC-4b ECC 1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND INTERFACE IS34/35MW01G084/164 1Gb (x8/x16) 1.8V NAND FLASH MEMORY with 4b ECC FEATURES Flexible & Efficient Memory Efficient Read and Program modes Architecture - Command/Address/Data Multiplexed I/O Interface - Memory Cell: 1bit/Memory Cell - Command Register Operation - Organization: 128Mb x8 /64Mb x16 - Automatic Page 0 Read at Power-Up - X8: Option - Memory Cell Array: (128M + 4M) x 8bit - Boot from NAND support - Data Register: (2K + 64) x 8bit - Automatic Memory Download - Page Size: (2K + 64) Byte - NOP: 4 cycles - Block Erase: (128K + 4K) Byte - Cache Program/Read Operation - X16: - Copy-Back Operation - Memory Cell Array: (64M + 2M) x 16bit - EDO mode - Data Register: (1K + 32) x 16bit - OTP operation - Page Size: (1K + 32) Word - Bad-Block-Protect - Block Erase: (64K + 2K) Word Advanced Security Protection Highest performance - Hardware Data Protection: - Read Performance: - Program/Erase Lockout during Power - Random Read: 25us (Max.) Transitions - Serial Access: 45ns (Max.) - Write Performance: - Program time: 300us - typical Industry Standard Pin-out & Packages - Block Erase time: 3ms typical - T =48-pin TSOP 1 (Call Factory) - B =63-ball VFBGA Low Power with Wide Temp. Ranges - Single 1.8V (1.7V to 1.95V) Voltage Supply - 15 mA Active Read Current - 10 A Standby Current - Temp Grades: - Industrial: -40C to +85C - Extended: -40C to +105C - Automotive, A1: -40C to +85C - Automotive, A2: -40C to +105C Reliable CMOS Floating Gate Technology - ECC Requirement: X8 - 4bit/512Byte X16 - 4bit/256Word - Endurance: 100K Program/Erase cycles - Data Retention: 10 years Integrated Silicon Solution, Inc.- www.issi.com 2 Rev. A3 11/14/2019

HS Compliance

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

ISSI may also be referenced as

Integrated Silicon Solution
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc
Lumissil

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