Technische Information / technical information Netz-Thyristor T570N Phase Control Thyristor Key Parameters V / V 6500 V DRM RRM I 540 A (T =85C) TAVM C I 10500 A TSM 3570A (T =55C) C V 1,35 V T0 r 1,4 m T R 21 K/kW thJC Clamping Force 1323 kN Max. Diameter 76 mm Contact Diameter 50 mm Height 26 mm For type designation please refer to actual shortform catalog Technische Information / technical information Netz-Thyristor T570N Phase Control Thyristor Elektrische Eigenschaften / electrical properties Hchstzulssige Werte / maximum rated values V ,V DRM RRM Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = 25C... T 6500 V vj vj max repetitive peak forward off-state and reverse voltage Elektrische Eigenschaften I Durchlastrom-Grenzeffektivwert T = 85 C TRMSM 850 A C maximum RMS on-state current I 540 A Dauergrenzstrom T = 85 C TAVM C 660 A average on-state current T = 70 C C TC = 55 C 760 A I TSM Stostrom-Grenzwert T = 25 C, t = 10 ms 10500 A vj P surge current T = T , t = 10 ms vj vj max P 9400 A It Grenzlastintegral T = 25 C, t = 10 ms 551,25 10 As vj P It-value T = T , t = 10 ms 441,8 10 As vj vj max P 150 A/s Kritische Stromsteilheit DIN IEC 60747-6 (di /dt) T cr critical rate of rise of on-state current f = 50 Hz, i = 3 A, di /dt = 6 A/s GM G 1000 V/s Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) vj vj max D DRM D cr th critical rate of rise of off-state voltage 5.Kennbuchstabe / 5 letter F Charakteristische Werte / characteristic values max. 2,75 V Durchlaspannung T = T , i = 1000A v vj vj max T T on-state voltage max. 1,35 V Schleusenspannung T = T V vj vj max (TO) threshold voltage max. 1,4 m Ersatzwiderstand T = T r vj vj max T slope resistance Durchlakennlinie 100A i 2700A T = T max. A -0,3296 T vj vj max on-state characteristic B 0,001724 v A B i C Ln(i 1) D i C 0,4376 T T T T D -0,05275 T = 25C, v = 12 V Zndstrom vj D I max. 350 mA GT gate trigger current T = 25C, v = 12 V vj D V max. 2,5 V Zndspannung GT gate trigger voltage Nicht zndender Steuerstrom T = T , v = 12 V I max. 20 mA vj vj max D GD gate non-trigger current Tvj = Tvj max , vD = 0,5 VDRM max. 10 mA T = T , v = 0,5 V V max. 0,4 V Nicht zndende Steuerspannung vj vj max D DRM GD gate non-trigger voltage T = 25C, v = 12 V I max. 350 mA Haltestrom vj D H holding current T = 25C, v = 12 V, R 10 I max. 3 A Einraststrom vj D GK L i = 3 A, di /dt = 6 A/s, t = 20 s latching current GM G g T = T i , i max. 400 mA Vorwrts- und Rckwrts-Sperrstrom vj vj max D R v = V , v = V forward off-state and reverse current D DRM R RRM DIN IEC 60747-6 t max. 2,5 s Zndverzug gd T = 25 C,i = 3 A, di /dt = 6 A/s gate controlled delay time vj GM G date of publication: 2014-06-18 prepared by: TM revision: approved by: JP 2.3 Date of Publication: 2014-06-18 Revision: 2.3 Seite/page: 2/11