SPP07N60S5 SPI07N60S5 Cool MOS Power Transistor V 600 V DS Feature R 0.6 DS(on) New revolutionary high voltage technology I 7.3 A D Worldwide best R in TO 220 DS(on) PG-TO262 PG-TO220 Ultra low gate charge 2 Periodic avalanche rated Extreme dv/dt rated 3 2 1 Ultra low effective capacitances P-TO220-3-1 Improved transconductance Type Package Ordering Code Marking 07N60S5 SPP07N60S5 PG-TO220 Q67040-S4172 07N60S5 SPI07N60S5 PG-TO262 Q67040-S4328 Maximum Ratings Parameter Symbol Value Unit A Continuous drain current I D T = 25 C 7.3 C T = 100 C 4.6 C 14.6 Pulsed drain current, t limited by T I p jmax D puls 230 mJ Avalanche energy, single pulse E AS I = - A, V = 50 V D DD 1) E 0.5 Avalanche energy, repetitive t limited by T AR AR jmax I = 7.3 A, V = 50 V D DD 7.3 A Avalanche current, repetitive t limited by T I AR jmax AR Gate source voltage V V 20 GS V Gate source voltage AC (f >1Hz) 30 GS Power dissipation, T = 25C P 83 W C tot C Operating and storage temperature T , T -55... +150 j stg Page 1 Rev. 2.7 2009-11-27SPP07N60S5 SPI07N60S5 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 20 V/ns V = 480 V, I = 7.3 A, T = 125 C DS D j Thermal Characteristics Parameter Symbol Values Unit min. typ. max. R - - 1.5 K/W Thermal resistance, junction - case thJC R - 62 Thermal resistance, junction - ambient, leaded - thJA SMD version, device on PCB: R thJA min. footprint - - 62 2 2) 6 cm cooling area - 35 - Soldering temperature, wavesoldering T - - 260 C sold 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. V V =0V, I =0.25mA 600 - - V Drain-source breakdown voltage (BR)DSS GS D V =0V, I =7.3A - 700 - Drain-Source avalanche V GS D (BR)DS breakdown voltage I =350, V =V 3.5 4.5 5.5 Gate threshold voltage V D GS DS GS(th) V =600V, V =0V, A Zero gate voltage drain current I DS GS DSS T =25C, - 0.5 1 j T =150C - - 100 j V =20V, V =0V - - 100 nA Gate-source leakage current I GS DS GSS V =10V, I =4.6A, Drain-source on-state resistance R GS D DS(on) T =25C - 0.54 0.6 j T =150C - 1.46 - j R f=1MHz, open Drain - 19 - Gate input resistance G Page 2 Rev. 2.7 2009-11-27