S29JL032J 32-Mb (4M 8-Bit/2M 16-Bit), 3 V, Simultaneous Read/Write Flash 32-Mb (4M 8-Bit/2M 16-Bit), 3 V, Simultaneous Read/Write Flash Distinctive Characteristics 10 mA active read current at 5 MHz Architectural Advantages 200 nA in standby or automatic sleep mode Simultaneous Read/Write operations Cycling endurance: 100K cycles per sector Data can be continuously read from one bank while execut- ing erase/program functions in another bank. Data retention: 20 years typical Zero latency between read and write operations Software Features Multiple bank architecture Four bank architectures available (see Table 2 on page 15). Supports Common Flash Memory Interface (CFI) Boot sectors Erase suspend/Erase resume Top or bottom boot sector configurations available Suspends erase operations to read data from, or program Any combination of sectors can be erased data to, a sector that is not being erased, then resumes the erase operation. Manufactured on 0.11 m Process Technology Data polling and toggle bits Secured Silicon Region: Extra 256 byte sector Provides a software method of detecting the status of pro- Factory locked and identifiable: 16 bytes available for se- gram or erase operations cure, random factory Electronic Serial Number verifiable as factory locked through autoselect function Unlock bypass program command Customer lockable: One-time programmable only. Once Reduces overall programming time when issuing multiple locked, data cannot be changed program command sequences Zero power operation Hardware Features Sophisticated power management circuits reduce power consumed during inactive periods to nearly zero. Ready/Busy output (RY/BY ) Compatible with JEDEC standards Hardware method for detecting program or erase cycle com- pletion Pinout and software compatible with single-power-supply flash standard Hardware reset pin (RESET ) Hardware method of resetting the internal state machine to Package Options the read mode 48-ball Fine-pitch BGA WP /ACC input pin Write protect (WP ) function protects the two outermost boot 48-pin TSOP sectors regardless of sector protect status Acceleration (ACC) function accelerates program timing Performance Characteristics Sector protection High performance Hardware method to prevent any program or erase operation Access time as fast as 60 ns within a sector Program time: 6 s/word typical using accelerated program- Temporary Sector Unprotect allows changing data in pro- ming function tected sectors in-system Ultra low power consumption (typical values) 2 mA active read current at 1 MHz Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-00857 Rev. *J Revised May 31, 2019S29JL032J General Description The S29JL032J is a 32 Mb, 3.0 volt-only flash memory device, organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. Word mode data appears on DQ15DQ0 byte mode data appears on DQ7DQ0. The device is designed to be programmed in-system with the standard 3.0 volt V supply, and can also be programmed in standard EPROM programmers. The CC device is available with an access time of 60, or 70 ns and is offered in a 48-ball FBGA or a 48-pin TSOP package. Standard control pinschip enable (CE ), write enable (WE ), and output enable (OE )control normal read and write operations, and avoid bus contention issues. The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. Document Number: 002-00857 Rev. *J Page 2 of 105