AUTOMOTIVE GRADE AUIRFR1018E HEXFET Power MOSFET Features D V 60V Advanced Process Technology DSS Ultra Low On-Resistance R typ. 7.1m DS(on) 175C Operating Temperature max. 8.4m Fast Switching G Repetitive Avalanche Allowed up to Tjmax I 79A D (Silicon Limited) Lead-Free, RoHS Compliant I S 56A Automotive Qualified * D (Package Limited) Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features D-Pak combine to make this design an extremely efficient and reliable AUIRFR1018E device for use in Automotive applications and a wide variety of other applications. GD S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T ) is 25C, unless otherwise specified. A Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 79 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 56 D C GS I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 56 A D C GS I 315 Pulsed Drain Current DM P T = 25C Maximum Power Dissipation 110 W D C 0.76 Linear Derating Factor W/C V Gate-to-Source Voltage 20 V GS Single Pulse Avalanche Energy (Thermally limited) E 88 mJ AS Avalanche Current I 47 A AR Repetitive Avalanche Energy E 11 mJ AR dv/dt Peak Diode Recovery 21 V/ns T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 1.32 R 50 Junction-to-Ambient (PCB Mount) C/W JA R 110 JA Junction-to-Ambient HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at Static Electrical T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250 A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.073 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 7.1 8.4 V = 10V, I = 47A DS(on) m GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 100 A GS(th) DS GS D gfs Forward Transconductance 110 S V = 50V, I = 47A DS D R Internal Gate Resistance 0.73 G(int) I Drain-to-Source Leakage Current 20 A V = 60V, V = 0V DSS DS GS 250 V = 48V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic Electrical T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge 46 69 nC I = 47A g D Q Gate-to-Source Charge 10 V = 30V gs DS Q Gate-to-Drain Mille) Charge 12 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 34 I = 47A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 13 ns V = 39V d(on) DD t Rise Time 35 I = 47A r D t Turn-Off Delay Time 55 R = 10 d(off) G t Fall Time 46 V = 10V f GS C Input Capacitance 2290 V = 0V iss GS C Output Capacitance 270 V = 50V oss DS C Reverse Transfer Capacitance 130 pF = 1.0MHz rss C eff. (ER) 390 V = 0V, V = 0V to 60V oss Effective Output Capacitance (Energy Related) GS DS C eff. (TR) 630 V = 0V, V = 0V to 60V oss Effective Output Capacitance (Time Related) GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I D Continuous Source Current A MOSFET symbol S 79 (Body Diode) showing the G I Pulsed Source Current 315 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 47A, V = 0V SD J S GS t Reverse Recovery Time 26 39 ns T = 25C V = 51V, rr J R T = 125C I = 47A 31 47 J F di/dt = 100A/ s Q T = 25C Reverse Recovery Charge 24 36 nC rr J T = 125C 35 53 J I Reverse Recovery Current 1.8 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Pulse width 400s duty cycle 2%. Calculated continuous current based on maximum allowable junction C eff. (TR) is a fixed capacitance that gives the same charging time oss temperature. Bond wire current limit is 56A. Note that current as C while V is rising from 0 to 80% V . limitations arising from heating of the device leads may occur with oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as oss some lead mounting arrangements. C while V is rising from 0 to 80% V . Repetitive rating pulse width limited by max. junction oss DS DSS When mounted on 1 square PCB (FR-4 or G-10 Material). For recom temperature. mended footprint and soldering techniques refer to application note AN-994. Limited by T , starting T = 25C, L = 0.08mH Jmax J R is measured at T approximately 90C. J R = 25, I = 47A, V =10V. Part not recommended for G AS GS use above this value. I 47A, di/dt 1668A/ s, V V , T 175C. SD DD (BR)DSS J 2 www.irf.com