PD - 94763 IRFZ48Z AUTOMOTIVE MOSFET IRFZ48ZS Features IRFZ48ZL O Advanced Process Technology HEXFET Power MOSFET O Ultra Low On-Resistance O Dynamic dv/dt Rating D O 175C Operating Temperature V = 55V DSS O Fast Switching O Repetitive Avalanche Allowed up to Tjmax R = 11m DS(on) Description G Specifically designed for Automotive applica- I = 61A tions, this HEXFET Power MOSFET utilizes the D S latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an ex- tremely efficient and reliable device for use in Automotive applications and a wide variety of 2 TO-220AB D Pak TO-262 other applications. IRFZ48Z IRFZ48ZS IRFZ48ZL Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 61 A D C GS I T = 100C Continuous Drain Current, V 10V (See Fig. 9) 43 C D GS I 240 Pulsed Drain Current DM P T = 25C 91 W C Maximum Power Dissipation D Linear Derating Factor 0.61 W/C V Gate-to-Source Voltage 20 V GS E 73 mJ AS Single Pulse Avalanche Energy (Thermally Limited) E (tested) AS Single Pulse Avalanche Energy Tested Value 120 I AR Avalanche Current See Fig.12a,12b,15,16 A E AR mJ Repetitive Avalanche Energy T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R 1.64 C/W JC Junction-to-Case R 0.50 CS Case-to-Sink, Flat, Greased Surface R 62 JA Junction-to-Ambient R 40 JA Junction-to-Ambient (PCB Mount, steady state) HEXFET is a registered trademark of International Rectifier. www.irf.com 1 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage55 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.054 V/C Reference to 25C, I = 1mA DSS J D R DS(on) Static Drain-to-Source On-Resistance 8.6 11 V = 10V, I = 37A m GS D V GS(th) Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A DS GS D gfs Forward Transconductance 24 S V = 25V, I = 37A DS D I Drain-to-Source Leakage Current 20 A V = 55V, V = 0V DSS DS GS 250 V = 55V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 200 nA V = 20V GS Gate-to-Source Reverse Leakage -200 V = -20V GS Q Total Gate Charge 4364nC I = 37A g D Q gs Gate-to-Source Charge 11 16 V = 44V DS Q gd Gate-to-Drain Mille) Charge 16 24 V = 10V GS t Turn-On Delay Time 15 ns V = 28V d(on) DD t Rise Time 69 I = 37A r D t d(off) Turn-Off Delay Time 35 R = 12 G t f Fall Time 39 V = 10V GS L D Internal Drain Inductance 4.5 nH Between lead, D 6mm (0.25in.) G L Internal Source Inductance 7.5 from package S S and center of die contact C iss Input Capacitance 1720 pF V = 0V GS C Output Capacitance 300 V = 25V oss DS C Reverse Transfer Capacitance 160 = 1.0MHz, See Fig. 5 rss C oss Output Capacitance 1020 V = 0V, V = 1.0V, = 1.0MHz GS DS C oss Output Capacitance 230 V = 0V, V = 44V, = 1.0MHz GS DS C eff. Effective Output Capacitance 380 V = 0V, V = 0V to 44V oss GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current 61 MOSFET symbol (Body Diode) A showing the I G Pulsed Source Current 240 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage T = 25C, I = 37A, V = 0V SD 1.3 V J S GS t Reverse Recovery Time 20 31 ns T = 25C, I = 37A, V = 30V rr J F DD Q di/dt = 100A/s Reverse Recovery Charge 13 20 nC rr t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) C eff. is a fixed capacitance that gives the same charging time oss Repetitive rating pulse width limited by as C while V is rising from 0 to 80% V . oss DS DSS max. junction temperature. (See fig. 11). Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive Jmax Limited by T , starting T = 25C, L =0.11mH, Jmax J avalanche performance. R = 25, I = 37A, V =10V. Part not G AS GS This value determined from sample failure population. 100% recommended for use above this value. tested to this value in production. I 37A, di/dt 920A/s, V V , SD DD (BR)DSS 2 This is applied to D Pak, when mounted on 1 square PCB T 175C. J ( FR-4 or G-10 Material ). For recommended footprint and Pulse width 1.0ms duty cycle 2%. soldering techniques refer to application note AN-994. 2 www.irf.com