IR MOSFET StrongIRFET IRF60B217 HEXFET Power MOSFET Application D V 60V DSS Brushed Motor drive applications BLDC Motor drive applications R typ. 7.3m DS(on) Battery powered circuits G max 9.0m Half-bridge and full-bridge topologies S Synchronous rectifier applications I 60A D Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters Benefits S D Improved Gate, Avalanche and Dynamic dV/dt Ruggedness G Fully Characterized Capacitance and Avalanche SOA TO-220AB Enhanced body diode dV/dt and dI/dt Capability IRF60B217 Lead-Free* RoHS Compliant, Halogen-Free G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRF60B217 TO-220 Tube 50 IRF60B217 60 30 I = 36A D 25 50 20 40 T = 125C J 15 30 10 20 T = 25C 5 J 10 0 0 4 8 12 16 20 25 50 75 100 125 150 175 V , Gate-to-Source Voltage (V) GS T , CaseTemperature (C) C Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage 1 2016 01-05 R (on), Drain-to -Source On Resistance ( m) DS I , Drain Current (A) D IRF60B217 Absolute Maximum Rating Symbol Parameter Max. Units I T = 25C Continuous Drain Current, VGS 10V (Silicon Limited) 60 D C I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 42 A D C GS I Pulsed Drain Current 225 DM P T = 25C Maximum Power Dissipation 83 W D C Linear Derating Factor 0.56 W/C V Gate-to-Source Voltage 20 V GS Operating Junction and T -55 to + 175 J Storage Temperature Range C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Avalanche Characteristics E Single Pulse Avalanche Energy 85 AS (Thermally limited) mJ E 124 AS (Thermally limited) Single Pulse Avalanche Energy I Avalanche Current A AR See Fig 15, 16, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 1.8 JC Case-to-Sink, Flat Greased Surface R 0.50 C/W CS Junction-to-Ambient R 62 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.047 V/C Reference to 25C, I = 1mA V / T (BR)DSS J D = 10V, I = 36A 7.3 9.0 V GS D R Static Drain-to-Source On-Resistance m DS(on) 9.0 V = 6.0V, I = 18A GS D V Gate Threshold Voltage 2.1 3.7 V V = V , I = 50A GS(th) DS GS D 1.0 V =40 V, V = 0V DS GS Drain-to-Source Leakage Current A I DSS 150 V =40V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 2.0 G Notes: Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 0.131mH, R = 50 , I = 36A, V =10V. Jmax J G AS GS I 36A, di/dt 630A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while VDS is rising from 0 to 80% V . oss oss DSS R is measured at T approximately 90C. J Limited by T , starting T = 25C, L = 1mH, R = 50 , I = 16A, V =10V. Jmax J G AS GS 2 2016 01-05