X-On Electronics has gained recognition as a prominent supplier of IPI530N15N3GXKSA1 mosfet across the USA, India, Europe, Australia, and various other global locations. IPI530N15N3GXKSA1 mosfet are a product manufactured by Infineon. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

IPI530N15N3GXKSA1 Infineon

IPI530N15N3GXKSA1 electronic component of Infineon
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See Product Specifications
Part No.IPI530N15N3GXKSA1
Manufacturer: Infineon
Category:MOSFET
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO262-3
Datasheet: IPI530N15N3GXKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 2.2425
10 : USD 1.8829
100 : USD 1.5347
500 : USD 1.2629
1000 : USD 1.144
2500 : USD 1.1131
5000 : USD 1.0883
10000 : USD 1.0783
25000 : USD 1.0549
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 1.526
3 : USD 1.316
10 : USD 1.064
19 : USD 0.882
51 : USD 0.826
N/A

Obsolete
     
Manufacturer
Product Category
Technology
Polarisation
Case
Mounting
Type Of Transistor
Drain-Source Voltage
On-State Resistance
Drain Current
Gate-Source Voltage
Power Dissipation
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IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G TM OptiMOS 3 Power-Transistor Product Summary Features V 150 V DS N-channel, normal level R 53 mW DS(on),max Excellent gate charge x R product (FOM) DS(on) I 21 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating RoHS compliant Halogen Free 1) Qualified according to JEDEC for target application Ideal for high-frequency switching and synchronous rectification Halogen-free according to IEC61249-2-21 Type IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G Package PG-TO263-3 PG-TO252-3 PG-TO262-3 PG-TO220-3 Marking 530N15N 530N15N 530N15N 530N15N Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C Continuous drain current 21 A D C T =100C 15 C 2) I T =25C 84 Pulsed drain current D,pulse C Avalanche energy, single pulse E I =18A, R =25W 60 mJ AS D GS V Gate source voltage 20 V GS P T =25C Power dissipation 68 W tot C Operating and storage temperature T , T -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 Rev. 2.6 page 1 2013-07-09IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 2.2 K/W thJC R minimal footprint - - 62 thJA Thermal resistance, junction - ambient 3) - - 40 6 cm2 cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =1mA 150 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =35A 2 3 4 GS(th) DS GS D V =120V, V =0V, DS GS Zero gate voltage drain current I - 0.1 1 A DSS T =25C j V =120V, V =0V, DS GS - 10 100 T =125C j Gate-source leakage current I V =20V, V =0V - 1 100 nA GSS GS DS R V =10V, I =18A Drain-source on-state resistance - 44 53 mW DS(on) GS D V =8V, I =9A - 44 53 GS D R Gate resistance - 2.1 - W G V >2 I R , DS D DS(on)max Transconductance g 11 21 - S fs I =18A D 1) J-STD20 and JESD22 2) See figure 3 3) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.6 page 2 2013-07-09

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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